Electron Interactions and Scaling Relations for Optical Excitations in Carbon Nanotubes

Recent fluorescence spectroscopy experiments on single wall carbon nanotubes reveal substantial deviations of observed absorption and emission energies from predictions of noninteracting models of the electronic structure. Nonetheless, the data for nearly armchair nanotubes obey a nonlinear scaling relation as a function the tube radius $R$. We show that these effects can be understood in a theory of large radius tubes, derived from the theory of two dimensional graphene where the coulomb interaction leads to a logarithmic correction to the electronic self energy and marginal Fermi liquid behavior. Interactions on length scales larger than the tube circumference lead to strong self energy and excitonic effects that compete and nearly cancel so that the observed optical transitions are dominated by the graphene self energy effects.Comment: 4 page

Surface States of Topological Insulators

We develop an effective bulk model with a topological boundary condition to study the surface states of topological insulators. We find that the Dirac point energy, the band curvature and the spin texture of surface states are crystal face-dependent. For a given face on a sphere, the Dirac point energy is determined by the bulk physics that breaks p-h symmetry in the surface normal direction and is tunable by surface potentials that preserve T symmetry. Constant energy contours near the Dirac point are ellipses with spin textures that are helical on the S/N pole, collapsed to one dimension on any side face, and tilted out-of-plane otherwise. Our findings identify a route to engineering the Dirac point physics on the surfaces of real materials.Comment: 4.1 pages, 2 figures and 1 tabl

Quantum Spin Hall Effect in Graphene

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the quantized transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are non chiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder and symmetry breaking fields are discussed.Comment: 4 pages, published versio

General model and equivalent circuit for the chemical noise spectrum associated to surface charge fluctuation in potentiometric sensors

This paper firstly reports a general and powerful approach to evaluate the power spectral density (PSD) of the surface charge fluctuations, so-called \u201cchemical noise\u201d, from a generic set of reactions at the sensing surface of potentiometric sensors such as, for instance, Ion-Sensitive Field Effect Transistors (ISFETs). Starting from the master equation, the spectral noise signature of a reaction set is derived as a function of the reaction kinetic parameters and of the interface concentration of the ionic species. Secondly, we derive an equivalent surface admittance, whose thermal noise PSD produces a noise PSD equal to that of the surface charge fluctuations. We also show how to expand this surface admittance into stair-case RC networks, with a number of elementary cells equal to the number of surface reactions involved. This admittance can be included in circuit simulations coupled with a SPICE compact model of the underlying FET, to enable the physically based modelling of frequency dispersion and noise of the sensing layer when simulating the sensor and the read-out. Validation with existing models and literature results as well as new application examples are provided. The proposed methodology to compute the PSD from rate equations is amenable to use in different contexts where fluctuations are generated by random transitions between discrete states with given exchange rates

General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors

We propose a general methodology to calculate the individual sensitivity and the cross-sensitivities of potentiometric sensor devices (e.g., ion sensitive FETs (ISFETs), CHEMFETs) with an arbitrary number of non-interacting receptors binding to ionic species or analytes in the electrolyte. The surface charge generated at the (bare or functionalized) interface with the electrolyte is described by the Poisson equation coupled to a linear system of equations for each type of receptor, where the unknowns are the fractions of sites binding with a given ion/analyte. Our general model encompasses in a unique framework a few simple special cases so far separately reported in the literature and provides for them closed-form expressions of the average site occupation probability. Detailed procedural description of the usage and benefits of the model is shown for specific cases with concurring surface chemical reactions

Z2Z_2 Topological Order and the Quantum Spin Hall Effect

The quantum spin Hall (QSH) phase is a time reversal invariant electronic state with a bulk electronic band gap that supports the transport of charge and spin in gapless edge states. We show that this phase is associated with a novel $Z_2$ topological invariant, which distinguishes it from an ordinary insulator. The $Z_2$ classification, which is defined for time reversal invariant Hamiltonians, is analogous to the Chern number classification of the quantum Hall effect. We establish the $Z_2$ order of the QSH phase in the two band model of graphene and propose a generalization of the formalism applicable to multi band and interacting systems.Comment: 4 pages RevTeX. Added reference, minor correction

Theoretical investigation of the evolution of the topological phase of Bi2_{2}Se3_{3} under mechanical strain

The topological insulating phase results from inversion of the band gap due to spin-orbit coupling at an odd number of time-reversal symmetric points. In Bi$_2$Se$_3$, this inversion occurs at the $\Gamma$ point. For bulk Bi$_2$Se$_3$, we have analyzed the effect of arbitrary strain on the $\Gamma$ point band gap using Density Functional Theory. By computing the band structure both with and without spin-orbit interactions, we consider the effects of strain on the gap via Coulombic interaction and spin-orbit interaction separately. While compressive strain acts to decrease the Coulombic gap, it also increases the strength of the spin-orbit interaction, increasing the inverted gap. Comparison with Bi$_2$Te$_3$ supports the conclusion that effects on both Coulombic and spin-orbit interactions are critical to understanding the behavior of topological insulators under strain, and we propose that the topological insulating phase can be effectively manipulated by inducing strain through chemical substitution