Caracterização química de quatro espécies de eucalipto para produção de bioetanol.

Resumo

Etching with Electron Beam Generated Plasmas

A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride (,200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride sSiOxFyd compounds. At low incident ion energies, the Ar–SF6 mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at ,75 eV. Etch rates were independent of the 0.5%–50% duty factors studied in this work

Etching with Electron Beam Generated Plasmas

A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride (,200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride sSiOxFyd compounds. At low incident ion energies, the Ar–SF6 mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at ,75 eV. Etch rates were independent of the 0.5%–50% duty factors studied in this work

Effect of Plasma Flux Composition on the Nitriding Rate of Stainless Steel

The total ion flux and nitriding rate for stainless steel specimens exposed to a modulated electron beam generated argon-nitrogen plasma were measured as a function of distance from the electron beam axis. The total ion flux decreased linearly with distance, but the nitriding rate increased under certain conditions, contrary to other ion flux/nitriding rate comparisons published in the literature. Variation in ion flux composition with distance was explored with a mass spectrometer and energy analyzer as a possible explanation for the anomalous nitriding rate response to ion flux magnitude. A transition in ion flux composition from mostly N2 1 to predominantly N1 ions with increasing distance was observed. Significant differences in molecular and atomic nitrogen ion energy distributions at a negatively biased electrode were also measured. An explanation for nitriding rate dependence based on flux composition and magnitude is proposed

Optimisation of CH4 and CO2 conversion and selectivity of H2 and CO for the dry reforming of methane by a microwave plasma technique using a Box–Behnken design

A microwave plasma was generated by N2 gas. Synthesis gases (H2 and CO) were produced by the interaction of CH4 and CO2 under plasma conditions at atmospheric pressure. The experimental pilot plant was set up, and the gases were sampled and analysed by gas chromatography–mass spectrometry. The Box–Behnken design (BBD) method was used to find the optimising conditions based on the experimental results. The response surface methodology based on a three-parameter and three-level BBD has been developed to find the effects of independent process parameters, which were represented by the gas flow rates of CH4, CO2, and N2 and their effects on the process performance in terms of CH4, CO2, and N2 conversion and selectivity of H2 and CO. In this work, four models based on quadratic polynomial regression have been determined to understand the connection between the limits of the feed gas flow rate and the performance of the process. The results show that the most important factor influencing the CO2, CH4, and N2 conversion and the selectivity of H2 and CO was “CO2 feed gas flow rate.” At the maximum desirable value of 0.92, the optimum CH4, CO2, and N2 conversion were 84.91%, 44.40%, and 3.37%, respectively, and the selectivities of H2 and CO were 51.31% and 61.17%, respectively. This was achieved at a gas feed flow rate of 0.19, 0.38, and 1.49 L min-1 for CH4, CO2, and N2, respectively

B–N/B–H Transborylation: borane-catalysed nitrile hydroboration

The reduction of nitriles to primary amines is a useful transformation in organic synthesis, however, it often relies upon stoichiometric reagents or transition-metal catalysis. Herein, a borane-catalysed hydroboration of nitriles to give primary amines is reported. Good yields (48–95%) and chemoselectivity (e.g., ester, nitro, sulfone) were observed. DFT calculations and mechanistic studies support the proposal of a double B–N/B–H transborylation mechanism

Properties of a vacuum ultraviolet laser created plasma sheet for a microwave reflector

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