Push clocks: a new approach to charge-coupled devices clocking

A new approach to charge-coupled device clocking has been developed—dynamic push clocks. With dynamic push clocks, the charge is transferred by pushing it from one storage site to another. The push clock approach results in a larger signal dynamic range, larger signal-to-noise ratio, and better performance at both high and low frequencies

Schottky Barrier Gate Field Effect Transistor

An obvious addition to the ever-growing family of field-effect devices is a field-effect transistor with a Schottky barrier gate. It is the purpose of this correspondence 1) to demonstrate that indeed such a device does function as expected and 2) to point out several advantages of such a structure under certain circumstances. A schematic cross section of the device is shown in Fig. 1. The gate consists of a metal in intimate contact with the clean semiconductor surface. Clearly the ohmic contacts can be placed either on top of or under the semiconductor layer

The Tunnel-Emission Amplifier

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Physics of Interfaces

It has long been known that when a metal is placed in contact with a semiconductor a rectifying contact often results. This rectification is a result of an energy barrier between the metal and the semiconductor. In order to form a nonrectifying or ohmic contact, two general approaches can be applied: either (1) the barrier energy can be reduced to a low enough value that the thermally excited current over the barrier is large enough for the application involved or (2) the semiconductor can be doped to a high carrier density to allow quantum mechanical tunneling to take place. The physical principles of these processes are discussed in this article

Some Properties of Exponentially Damped Wave Functions

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Relativity and the Scientific Method

The recent PROCEEDINGS article by J. R. Pierce has triggered considerable adverse comment on Einstein's Theory of Relativity. In the maze of detail which was discussed, one very important principle was all but forgotten, i.e., the operation of the scientific method

Pulse Characteristic Display for Tunnel Emission Devices

Recent studies on tunnel emission devices have demonstrated that destruction normally occurs because of high temperature generated within the thin film structure while their electrical characteristics are being measured. This difficulty has been overcome to a large degree by pulse tests performed with the unit described here. The most useful data to be observed on devices designed to emit electrons into a vacuum are: (a) the voltampere characteristic of the diode (metal-insulator-metal structure), and (b) the transfer characteristic (i.e., emitted current vs diode current)