GRAIN BOUNDARIES AND ANTIPHASE BOUNDARIES IN GaAs

Bicrystals of GaAs with a predetermined orientation relationships between the grains have been produced by growing GaAs epilayers on substrates cut from Czochralski-grown germanium bicrystals. Grain boundaries have also been generated in GaAs epilayers grown on (110) Ge substrate. In this report, an extensive study of such interfaces is illustrated by a transmission electron microscopy (TEM) study of the atomic structure of first-, second- and third-order twin boundaries. Antiphase boundaries (APBs) have also been produced in GaAs epilayers grown epitactically on Ge substrates. Both the structure of these interfaces and the interactions of the APBs with grain boundaries and lattice dislocations have been examined using TEM