Semiempirical calculation of deep levels: divacancy in Si

A study of the electronic levels associated with the divacancy in silicon is reported. The extended Huckel theory is shown to reproduce the band structure of silicon. The electronic levels of the divacancy are calculated by considering a periodic array of large unit cells each containing 62 atoms; a 64 atom perfect cell with two atoms removed to form the divacancy. The results are found to be in qualitative agreement with the results of EPR and infrared absorption measurements

Electronic properties of deep levels in p‐type CdTe

DLTS and associated electrical measurements were made on unintentionally doped CdTe crystals obtained from several vendors, on Cu‐doped CdTe, and on Te‐annealed CdTe. All of the crystals were p‐type. Four majority carrier deep levels were observed in the temperature range from 100–300 K with activation energies relative to the valence band of 0.2, 0.41, 0.45, and 0.65 eV. Two of these levels were specific to certain crystals while the other two were seen in every sample and are attributed to common impurities or native defects. Fluctuations in the concentrations of levels across samples and as a result of modest sample heating (400 K) were also observed

Energy gaps in amorphous covalent semiconductors

A calculation of approximate density of states for a disordered covalent semiconductor shows that the energy gap is due to the presence of short range order

Critical analysis of the 'generalized coherent wave approximation'

The formalism developed by Fletcher (1967) to take account of the presence of short range order in the calculation of the electronic energy spectrum of amorphous covalent semiconductors is examined critically and found to have fundamental difficulties

Proceedings From the First Annual Researcher/Practitioner Forum: The State of Research on Diversity in Philanthropy

This report summarizes the discussions that took place at the first annual Researcher/Practitioner Forum which was held on September 27 and 28, 2007 at El Pomar Foundation's Penrose House conference facilities in Colorado Springs, CO. The Forum was co-sponsored by the Council on Foundations, ARNOVA and the Foundation Center and was made possible by a grant from the Lumina Foundation. The first annual Researcher/Practitioner Forum brought together 25 researchers and foundation representatives to discuss the state of research on diversity in philanthropy

Ideal CdTe/HgTe superlattices

In this paper we consider a new superlattice system consisting of alternating layers of CdTe and HgTe constructed parallel to the (001) zincblende plane. The tight‐binding method is used to calculate the electronic properties of this system, in particular, band edge and interface properties. The energy gap as a function of layer thickness is determined. It is found to decrease monotonically with increasing HgTe layer thickness for a fixed ratio of CdTe to HgTe layer thicknesses. The symmetry of the valence band maximum state is found to change at certain HgTe layer thicknesses. This is explained by relating the superlattice states to bulk CdTe and HgTe states. The existence of interface states is investigated for the superlattice with 12 layers of CdTe alternating with 12 of HgTe. Interface states are found near the boundaries of the Brillouin zone, but none are found in the band gap

Structural perfection in poorly lattice matched heterostructures

Continuum elastic theory is applied to the formation of misfit dislocations and point defects in strained layer structures. Explicit calculations of the energies of misfit dislocations in the double‐ and single‐kink geometries yield line tensions below which strained films are stable with respect to defect formation. Our results yield a mismatch‐dependent stability limit which, in the double kink case, differs from the Matthews–Blakeslee model by a geometrical factor and by the addition of a stress term associated with climb of the misfit dislocation. While our calculations yield equilibrium stability limits which may not correspond to observed critical thicknesses, the calculated stresses may be applied to descriptions of the kinetics of strain relief in films grown beyond these limits. Last, calculations of strain‐related contributions to the free energy of formation of point defects suggest a contribution │ΔG_(strain)│ ≃0.25 eV for a 5% lattice mismatch. This suggests a means of suppressing or enhancing the formation of vacancies or interstitials in semiconductors favoring these defects

Localization of superlattice electronic states and complex bulk band structures

The relative lineup of the band structures of the two constituents of a semiconductor superlattice can cause charge carriers to be confined. This occurs when the energy of a superlattice state is located in an allowed energy region of one of the constituents (the "well" semiconductor), but in the band gap of the other (the "barrier" semiconductor). A charge carrier will tend to be confined in the layers made from the semiconductor with the allowed region at that energy. It will have an exponentially decaying amplitude to be found in the semiconductor with a band gap at that energy

Tight‐binding calculation for the AlAs–GaAs (100) interface

We report the results of a study of the electronic properties of the AlAs–GaAs interface using the tight‐binding method. The tight‐binding matrix for the superlattice system is used in the limit in which the thickness of the repeated superlattice slab becomes large. This system is studied in detail with special emphasis placed on the determination of interface states. No interface states with energies within the GaAs forbidden gap are found. The densities of states per layer are calculated and compared with bulk densities of states. They resemble the bulk densities of states except for layers adjacent to the interface