Surface core excitons in III-V semiconductors

Recent experiments have shown that the cation core excitons on the (110) surface of many III-V semiconductors have very large binding energies.(^1) They are sometimes reported to be bound by as much as ≳0.8 eV, tightly bound compared to bulk binding energies of ≾0.1 eV. To explore this phenomenon, we have calculated the binding energies and oscillator strengths of core excitons on the (110) surface of GaAs, GaSb, GaP, and InP

Fluctuations in the transmission properties of a quantum dot with interface roughness and impurities

We examine statistical fluctuations in the transmission properties of quantum dots with interface roughness and neutral impurities. For this purpose we employ a supercell model of quantum transport capable of simulating potential variations in three dimensions. We find that sample to sample variations in interface roughness in a quantum dot waveguide can lead to substantial fluctuations in the n=1 transmission resonance position, width and maximum. We also find that a strongly attractive impurity near the centre of a quantum dot can reduce these fluctuations. Nevertheless, the presence of more than a single impurity can give rise to a complex resonance structure that varies with impurity configuration

Interface Roughness Effects in Ultra-Thin Tunneling Oxides

Advanced MOSFET for ULSI and novel silicon-based devices require the use of ultrathin tunneling oxides where non-uniformity is often present. We report on our theoretical study of how tunneling properties of ultra-thin oxides are affected by roughness at the silicon/oxide interface. The effect of rough interfacial topography is accounted for by using the Planar Supercell Stack Method (PSSM) which can accurately and efficiently compute scattering properties of 3D supercell structures. Our results indicate that while interface roughness effects can be substantial in the direct tunneling regime, they are less important in the Fowler-Nordheim regime

Experimental and theoretical study of ultra-thin oxides

We report on an experimental and theoretical study of transport through thin oxides. The experimental study was carried out on the tunnel switch diode (TSD) which consists of an MOS junction on top of a pn junction. The properties of the TSD depends critically on the properties of the tunnel oxide layer. Our results indicate that these devices can exhibit two different modes of behaviour depending on the stress history of the oxide. An unstressed device exhibits a thyristor-like I-V characteristic with fairly low current density. As the oxide is stressed, however, the I-V characteristic discontinuously shifts into a higher-current thyristor-like mode in which current transport appears to be highly non-uniform and depends strongly on stress history. This suggests a possible structural change in the oxide layer which is not completely destructive in that the device continues to function. We present a possible theoretical model of such a structural change in which microscopic filaments are generated in the oxide. Calculations of J-V curves for such structures with varying filament heights qualitatively match stressed MOS I-V curves found in the literature and qualitatively explain the dual-mode behaviour of the TSD

Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

The electrical characteristics of various size tunnel switch diode devices, composed of Al/SiO2/n-Si/p+-Si layers, which operate with a range of parameters (such as current densities in excess of 104 A/cm2) that stress the oxide layer far beyond the levels used in typical thin oxide metal-oxide semiconductor research have been examined. It is found that the first time a large current and electric field are applied to the device, a "forming" process enhances transport through the oxide in the vicinity of the edges of the gate electrode, but the oxide still retains its integrity as a tunnel barrier. The device operation is relatively stable to stresses of greater than 107 C/cm2 areally averaged, time-integrated charge injection. Duplication and characterization of these modified oxide tunneling properties was attempted using scanning tunneling microscopy (STM) to stress and probe the oxide. Electrical stressing with the STM tip creates regions of reduced conductivity, possibly resulting from trapped charge in the oxide. Lateral variations in the conductivity of the unstressed oxide over regions roughly 20–50 nm across were also found

Gaming with Mr. Slot or gaming the slot machine? Power, anthropomorphism, and risk perception

We propose that risk perceptions are systematically influenced by anthropomorphism. Anthropomorphism effects, however, are moderated by the individual's feelings of social power. People with low power perceive higher risk in playing a slot machine (study 1) and in getting skin cancer (study 2) when the risk-bearing entities (the slot machine and skin cancer) are highly anthropomorphized. In contrast, those with high power perceive greater risk when the entities are less anthropomorphized. We hypothesize these effects occur because those with high (low) power perceived a greater (lesser) degree of control over the anthropomorphized entity. In study 3, we investigate the reverse effect that higher perceived risk may increase anthropomorphism for people with low power but decrease anthropomorphism for people with high power. © 2010 by JOURNAL OF CONSUMER RESEARCH, Inc.published_or_final_versio

Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment

The exact nature of the signal in scanning apertureless microscopy techniques is the subject of much debate. We have sought to resolve this controversy by carrying out simulations and experiments on the same structures. Simulations of a model of tip–sample coupling are shown to exhibit features that are in agreement with experimental observations at dimensions below the diffraction limit. The simulation of the optical imaging process is carried out using atomic force microscope data as a topographical template and a tip–sample dipole coupling model as the source of optical signal. The simulations show a number of key fingerprints including a dependence on the polarization of the external laser source, the size of the tip, and index of refraction of the sample being imaged. The experimental results are found to be in agreement with many of the features of the simulations. We conclude that the results of the dipole coupling theory agree qualitatively with experimental data and that apertureless microscopy measures optical properties, not just topography