Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope

We use an Atomic Force Microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip as a movable current probe, we investigate the scaling of the device properties with channel length. Using the tip as a voltage probe, we study the properties of the contacts. We find that Au makes an excellent contact in the p-region, with no Schottky barrier. In the n-region large contact resistances were found which dominate the transport properties.Comment: 4 pages, 5 figure

Geometrical Dependence of High-Bias Current in Multiwalled Carbon Nanotubes

We have studied the high-bias transport properties of the different shells that constitute a multiwalled carbon nanotube. The current is shown to be reduced as the shell diameter is decreased or the length is increased. We assign this geometrical dependence to the competition between electron-phonon scattering process and Zener tunneling.Comment: 4 pages, 4 figure

Capacitance spectroscopy in quantum dots: Addition spectra and decrease of tunneling rates

A theoretical study of single electron capacitance spectroscopy in quantum dots is presented. Exact diagonalizations and the unrestricted Hartree-Fock approximation have been used to shed light over some of the unresolved aspects. The addition spectra of up to 15 electrons is obtained and compared with the experiment. We show evidence for understanding the decrease of the single electron tunneling rates in terms of the behavior of the spectral weight function. (To appear in Phys. Rev. B (Rapid Comm.))Comment: 10 pages, Revtex, hard copy or PostScript Figures upon request on [email protected]

Dynamic nuclear polarization at the edge of a two-dimensional electron gas

We have used gated GaAs/AlGaAs heterostructures to explore nonlinear transport between spin-resolved Landau level (LL) edge states over a submicron region of two-dimensional electron gas (2DEG). The current I flowing from one edge state to the other as a function of the voltage V between them shows diode-like behavior---a rapid increase in I above a well-defined threshold V_t under forward bias, and a slower increase in I under reverse bias. In these measurements, a pronounced influence of a current-induced nuclear spin polarization on the spin splitting is observed, and supported by a series of NMR experiments. We conclude that the hyperfine interaction plays an important role in determining the electronic properties at the edge of a 2DEG.Comment: 8 pages RevTeX, 7 figures (GIF); submitted to Phys. Rev.

Sharp and Smooth Boundaries of Quantum Hall Liquids

We study the transition between sharp and smooth density distributions at the edges of Quantum Hall Liquids in the presence of interactions. We find that, for strong confining potentials, the edge of a $\nu=1$ liquid is described by the $Z_F=1$ Fermi Liquid theory, even in the presence of interactions, a consequence of the chiral nature of the system. When the edge confining potential is decreased beyond a point, the edge undergoes a reconstruction and electrons start to deposit a distance $\sim 2$ magnetic lengths away from the initial QH Liquid. Within the Hartree-Fock approximation, a new pair of branches of gapless edge excitations is generated after the transition. We show that the transition is controlled by the balance between a long-ranged repulsive Hartree term and a short-ranged attractive exchange term. Such transition also occurs for Quantum Dots in the Quantum Hall Regime, and should be observable in resonant tunneling experiments. Electron tunneling into the reconstructed edge is also discussed.Comment: 28 pages, REVTeX 3.0, 18 figures available upon request, cond-mat/yymmnn

Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes

We use electrostatic force microscopy and scanned gate microscopy to probe the conducting properties of carbon nanotubes at room temperature. Multi-walled carbon nanotubes are shown to be diffusive conductors, while metallic single-walled carbon nanotubes are ballistic conductors over micron lengths. Semiconducting single-walled carbon nanotubes are shown to have a series of large barriers to conduction along their length. These measurements are also used to probe the contact resistance and locate breaks in carbon nanotube circuits.Comment: 4 page

Resonant Tunneling through Multi-Level and Double Quantum Dots

We study resonant tunneling through quantum-dot systems in the presence of strong Coulomb repulsion and coupling to the metallic leads. Motivated by recent experiments we concentrate on (i) a single dot with two energy levels and (ii) a double dot with one level in each dot. Each level is twofold spin-degenerate. Depending on the level spacing these systems are physical realizations of different Kondo-type models. Using a real-time diagrammatic formulation we evaluate the spectral density and the non-linear conductance. The latter shows a novel triple-peak resonant structure.Comment: 4 pages, ReVTeX, 4 Postscript figure

Multi-shell gold nanowires under compression

Deformation properties of multi-wall gold nanowires under compressive loading are studied. Nanowires are simulated using a realistic many-body potential. Simulations start from cylindrical fcc(111) structures at T=0 K. After annealing cycles axial compression is applied on multi-shell nanowires for a number of radii and lengths at T=300 K. Several types of deformation are found, such as large buckling distortions and progressive crushing. Compressed nanowires are found to recover their initial lengths and radii even after severe structural deformations. However, in contrast to carbon nanotubes irreversible local atomic rearrangements occur even under small compressions.Comment: 1 gif figure, 5 ps figure

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the ``on''-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level.Comment: 6 pages text, 3 figures and 1 table of content graphic; available as NanoLetters ASAP article on the we

Scanned Potential Microscopy of Edge and Bulk Currents in the Quantum Hall Regime

Using an atomic force microscope as a local voltmeter, we measure the Hall voltage profile in a 2D electron gas in the quantum Hall (QH) regime. We observe a linear profile in the bulk of the sample in the transition regions between QH plateaus and a distinctly nonlinear profile on the plateaus. In addition, localized voltage drops are observed at the sample edges in the transition regions. We interpret these results in terms of theories of edge and bulk currents in the QH regime.Comment: 4 pages, 5 figure