6 research outputs found
Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals
We show that random telegraph signals in metal-oxide-silicon transistors at
millikelvin temperatures provide a powerful means of investigating tunneling
between a two-dimensional electron gas and a single defect state. The tunneling
rate shows a peak when the defect level lines up with the Fermi energy, in
excellent agreement with theory of the Fermi-edge singularity at finite
temperature. This theory also indicates that defect levels are the origin of
the dissipative two-state systems observed previously in similar devices.Comment: 5 pages, REVTEX, 3 postscript figures included with epsfi
Non Linear Current Response of a Many-Level Tunneling System: Higher Harmonics Generation
The fully nonlinear response of a many-level tunneling system to a strong
alternating field of high frequency is studied in terms of the
Schwinger-Keldysh nonequilibrium Green functions. The nonlinear time dependent
tunneling current is calculated exactly and its resonance structure is
elucidated. In particular, it is shown that under certain reasonable conditions
on the physical parameters, the Fourier component is sharply peaked at
, where is the spacing between
two levels. This frequency multiplication results from the highly nonlinear
process of photon absorption (or emission) by the tunneling system. It is
also conjectured that this effect (which so far is studied mainly in the
context of nonlinear optics) might be experimentally feasible.Comment: 28 pages, LaTex, 7 figures are available upon request from
[email protected], submitted to Phys.Rev.