Electron capture from K shells by fully stripped ions

This article discusses electron capture from K shells by fully stripped ions

Nuclear lifetime of states in ⁹⁴Tc and ⁹⁶Tc via the pulsed-beam, direct-timing technique

This article discusses nuclear lifetime of states in ⁹⁴TC and ⁹⁶TC via the pulsed-beam, direct-timing technique

Investigation of the Saturation of Elemental Concentration in the Depth Profile of Low Energy Silver Ion Implants in Silicon

For the efficient absorption of light in a broad wavelength band, Si photovoltaic devices require a high concentration of metal atoms at a shallow depth up to a few 10s of nm in the Si substrates. Low energy (< 50 keV) implantation of Ag ions in Si is one of the most suitable synthesis steps to facilitate the formation of these metal nanoclusters at the shallow depths in Si. However, during the low energy implantation of the heavy ions, one of the unintended consequences is the sputtering of target atoms particularly if the target is made of lower Z materials such as Si. In this study, we have investigated the re-distribution of atoms in the target layers due to the surface sputtering effects from 50 keV Ag ion implantation in Si substrates. Initially, the implant profile was estimated with the widely used static simulation code, theStopping and Range of Ions in Matter (SRIM). However, it’s simulation routine lacks any consideration of the fluence dependent evolution of the target material. Therefore, we have explored the use of another ion-solid interaction code T-DYN, which considers the dynamic changes in the thickness and/or composition of the target material during the implantation process. For 50 keV Ag ion implantation in Si, the T-DYN simulation predicts the Ag ion depth profile reaches a maximum or saturation in the concentration at a critical ion fluence of ~7×1016 atoms/cm2, whereas for a more heavier element like Au, similar saturation in the concentration is predicted at a relatively lower fluence of ~4×1016 atoms/cm2. The depth profiles of the implanted Ag atoms extracted from experiments utilizing the Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy characterization techniques show asymmetric distributions with the position of peak concentration depth gradually moving towards the Si surface with increasing implant ion fluence. Once the implantation ion fluence reached a critical value, the peak value of the elemental concentration is seen saturated similar to the predictions from T-DYN simulations

Carbon K-shell x-ray and Auger-electron production in hydrocarbons and carbon oxides by 0.6-2.0-MeV protons

Article discussing research on carbon K-shell x-ray and Auger-electron production in hydrocarbons and carbon oxides by 0.6-2.0-MeV protons

Feasibility of Formation of Ge1-x-y Six Sny Layers With High Sn Concentration via Ion Implantation

By increasing the Sn concentration in Ge1-ySny and Ge1-x-ySixSny systems, these materials can be tuned from indirect to direct bandgap along with increasing electronic and photonic properties. Efforts have been made to synthesize Sn-Ge and Ge-Si-Sn structures and layers to produce lower energy direct bandgap materials. Due to low solid solubility of Sn in Ge and Si-Ge layers, high concentrations of Sn are not achieved by traditional synthesis processes such as chemical vapor deposition or molecular beam epitaxy. Implantation of Sn into Si-Ge systems, followed by rapid thermal annealing or pulse laser annealing, is shown to be an attractive technique for increasing Sn concentration, which can increase efficiencies in photovoltaic applications. In this paper, dynamic ion-solid simulation results are presented. Simulations were performed to determine optimal beam energy, implantation order, and fluence for a multi-step, ion-implantation based synthesis process

K-shell x-ray production cross sections of selected elements from Ti to Y for 0.5- to 2.5-MeV alpha-particle bombardment

This article discusses K-shell x-ray production cross sections of Ti, V, Cr, Fe, Ni, Cu, Zn, Ga, As, Se, Rb, Sr, and Y for 0.5- to 2.5-MeV alpha particles

K-shell ionization by low-velocity ions

Article discussing K-shell ionization by low-velocity ions. K-shell x-ray-production measurements are reported for protons, deuterons, and alpha particles incident on thin foils of copper, niobium, silver, and antimony

Spontaneous coordinated activity in cultured networks: analysis of multiple ignition sites, primary circuits, and burst phase delay distributions

This article discusses an analysis of multiple ignition sites, primary circuits, and burst phase delay distributions