186 research outputs found
Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers
The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystallization rate of the front amorphous/crystalline (a/c) interface is monitored with time resolved reflectivity.Secondary ion mass spectrometry(SIMS) is used to examine H implanted profiles at selected stages of the anneals. The H retardation of the SPE rate is determined up to a H concentration of 2.3×10²⁰ cm¯³ where the SPE rate decreases by 80%. Numerical simulations are performed to model the H diffusion, the moving a/c interfaces and the refinement of the H profile at these interfaces. Despite the high H concentration involved, a simple Fickian diffusion model results in good agreement with the SIMS data. The segregation coefficient is estimated to be 0.07 at 575 °C. A significant fraction of the H escapes from the a-Si layer during SPE especially once the two a/c interfaces meet which is signified by the lack of H-related voids after a subsequent high temperature anneal.This research was supported by a grant from the Australian
Research Council
Optical addressing of an individual erbium ion in silicon
The detection of electron spins associated with single defects in solids is a
critical operation for a range of quantum information and measurement
applications currently under development. To date, it has only been
accomplished for two centres in crystalline solids: phosphorus in silicon using
electrical readout based on a single electron transistor (SET) and
nitrogen-vacancy centres in diamond using optical readout. A spin readout
fidelity of about 90% has been demonstrated with both electrical readout and
optical readout, however, the thermal limitations of the electrical readout and
the poor photon collection efficiency of the optical readout hinder achieving
the high fidelity required for quantum information applications. Here we
demonstrate a hybrid approach using optical excitation to change the charge
state of the defect centre in a silicon-based SET, conditional on its spin
state, and then detecting this change electrically. The optical frequency
addressing in high spectral resolution conquers the thermal broadening
limitation of the previous electrical readout and charge sensing avoids the
difficulties of efficient photon collection. This is done with erbium in
silicon and has the potential to enable new architectures for quantum
information processing devices and to dramatically increase the range of defect
centres that can be exploited. Further, the efficient electrical detection of
the optical excitation of single sites in silicon is a major step in developing
an interconnect between silicon and optical based quantum computing
technologies.Comment: Corrected the third affiliation. Corrected one cross-reference of
"Fig. 3b" to "Fig. 3c". Corrected the caption of Fig. 3a by changing (+-)1 to
Exploring quantum chaos with a single nuclear spin
Most classical dynamical systems are chaotic. The trajectories of two
identical systems prepared in infinitesimally different initial conditions
diverge exponentially with time. Quantum systems, instead, exhibit
quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of
quantum systems whose classical counterparts are chaotic are expected to show
some features that resemble chaotic motion. Among the many controversial
aspects of the quantum-classical boundary, the emergence of chaos remains among
the least experimentally verified. Time-resolved observations of quantum
chaotic dynamics are particularly rare, and as yet unachieved in a single
particle, where the subtle interplay between chaos and quantum measurement
could be explored at its deepest levels. We present here a realistic proposal
to construct a chaotic driven top from the nuclear spin of a single donor atom
in silicon, in the presence of a nuclear quadrupole interaction. This system is
exquisitely measurable and controllable, and possesses extremely long intrinsic
quantum coherence times, allowing for the observation of subtle dynamical
behavior over extended periods. We show that signatures of chaos are expected
to arise for experimentally realizable parameters of the system, allowing the
study of the relation between quantum decoherence and classical chaos, and the
observation of dynamical tunneling.Comment: revised and published versio
High-fidelity adiabatic inversion of a electron spin qubit in natural silicon
The main limitation to the high-fidelity quantum control of spins in
semiconductors is the presence of strongly fluctuating fields arising from the
nuclear spin bath of the host material. We demonstrate here a substantial
improvement in single-qubit gate fidelities for an electron spin qubit bound to
a P atom in natural silicon, by applying adiabatic inversion instead of
narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe
signatures in the spin resonance spectra and the spin coherence time that are
consistent with the presence of an additional exchange-coupled donor. This work
highlights the effectiveness of adiabatic inversion techniques for spin control
in fluctuating environments.Comment: 4 pages, 2 figure
Bell's inequality violation with spins in silicon
Bell's theorem sets a boundary between the classical and quantum realms, by
providing a strict proof of the existence of entangled quantum states with no
classical counterpart. An experimental violation of Bell's inequality demands
simultaneously high fidelities in the preparation, manipulation and measurement
of multipartite quantum entangled states. For this reason the Bell signal has
been tagged as a single-number benchmark for the performance of quantum
computing devices. Here we demonstrate deterministic, on-demand generation of
two-qubit entangled states of the electron and the nuclear spin of a single
phosphorus atom embedded in a silicon nanoelectronic device. By sequentially
reading the electron and the nucleus, we show that these entangled states
violate the Bell/CHSH inequality with a Bell signal of 2.50(10). An even higher
value of 2.70(9) is obtained by mapping the parity of the two-qubit state onto
the nuclear spin, which allows for high-fidelity quantum non-demolition
measurement (QND) of the parity. Furthermore, we complement the Bell inequality
entanglement witness with full two-qubit state tomography exploiting QND
measurement, which reveals that our prepared states match the target maximally
entangled Bell states with 96\% fidelity. These experiments demonstrate
complete control of the two-qubit Hilbert space of a phosphorus atom, and show
that this system is able to maintain its simultaneously high initialization,
manipulation and measurement fidelities past the single-qubit regime.Comment: 10 pages, 3 figures, 1 table, 4 extended data figure
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