Impurity diffusion process for silicon semiconductors is fast and precise

Impurity diffusion process produces precision silicon semiconductor junctions economically and fast. Oxide is deposited on a silicon wafer and a controlled concentration of impurity atoms in gaseous form is simultaneously introduced into the reaction

Diffusion of impurities into silicon from gaseous sources

Diffusion of impurities into silicon from gaseous source

TEOS oxide studies Final project report, 15 Feb. - 15 Aug. 1965

Chemical deposition of silicon dioxide films by tetraethyl orthosilicate decomposition and doped silicon dioxide films as diffusion source