Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE

We report the characteristics of the strained In0.65Ga0.35As triple quantum well (QW) diode lasers grown by metalorganic vapor phase epitaxy (MOVPE) on lattice-mismatched substrates such as GaAs or Si, by utilizing InP metamorphic buffer layers (MBLs) in conjunction with InAs nanostructure-based dislocation filters. As the lattice-mismatch between the substrate and InP MBL increases, higher threshold current densities and lower slope efficiencies were observed, together with higher temperature sensitivities for the threshold current and slope efficiency. Structural analysis performed by both high-resolution X-ray diffraction (HR-XRD) and transmission electron microscopy indicates graded and/or rougher QW interfaces within the active region grown on the mismatched substrate, which accounts for the observed devices characteristics

1.1 W continuous-wave, narrow spectral width (<1 angstrom) emission from broad-stripe, distributed-feedback diode lasers (λ = 0.893 μm)

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder

Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder

Simplified-antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder

730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder

0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder

Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers

We compare the gain and radiative efficiency characteristics of an InGaAsN and an InGaAs laser structure where the devices are identical except for the nitrogen content and emission wavelength. We find that the inclusion of nitrogen has little impact on the gain spectra except for the required shift to longer wavelength and that the intrinsic gain-radiative current characteristics may be slightly better for the nitrogen-containing materials. The radiative efficency is reduced by a factor of 4 in the samples containing nitrogen due to increased nonradiative recombination

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder