3 research outputs found

    Some aspects of linear space automata

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    Linear space automaton is introduced as a generalization of probabilistic automaton and its various properties are investigated.Linear space automaton has the abilities equivalent to probabilistic automaton but we can treat the former more easily than the latter because we can make use of properties of the linear space, successfully.First the solutions are given for the problems of connectivity, state equivalence, reduction and identification of linear space automata. Second, the matrix representation of linear space automaton is investigated and the relations between linear space automaton and probabilistic automaton are shown. Third, we discuss the closure properties of the family of all real functions on a free semigroup Σ* which are defined by linear space automata and then give a solution to the synthesis problem of linear space automata.Finally, some considerations are given to the problems of sets of tapes accepted by l.a.'s and also of operations under which the family of all the output functions of l.a.'s is not closed

    Investigation of Buried-Well Potential Perturbation Effects on SEU in SOI DICE-Based Flip-Flop Under Proton Irradiation

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    :The effects of buried-well potential perturbation under the buried-oxide (BOX) layer are studied in both a heavy-ion single event upset (SEU) test and a high-energy proton-SEU test of a silicon-on-insulator (SOI) dual interlocked storage cell (DICE)-based flip-flop. Their dependence on incident angle and back bias is discussed. We fabricated both DICE-based flip-flop and conventional flip-flop, which are designed as 80 000-stage shift-register chains. In a heavy-ion test, a considerable number of SEUs were observed at back bias exceeding 2.4 V, and a ten-times larger SEU-cross section was finally recorded at back bias of 3.0 V compared with the total active area of a DICE-based flip-flop cell. This marks the first case where DICE topology was found to be broken by buried-well potential perturbation on an SOI DICE-based flip-flop. In a proton test, one error was observed at back bias of 2.0 V. The SEU rate in the Van Allen belt at an altitude of 2300 km and an inclination of 90° was estimated as being once every 5 years
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