Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation

The dark current is a fundamental figure of merit to characterize the performance of high-sensitivity, low-noise mid- and far-infrared barrier photodetectors. In the context of HgCdTe barrier photodetectors, the trend is to use very low doping concentrations, in an attempt to minimize recombination processes. In the present work, through TCAD simulations, we delve deeper into the design of low-dark-current $p{\mathrm{B}}n$ detectors, showing the possible existence of an optimum doping. This occurrence is investigated and interpreted also by means of closed-form expressions for the lifetimes, emphasizing the role of the interplay between Auger and Shockley-Read-Hall generation processes

Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green\u27s Function-Drift-Diffusion Approach

This work investigates carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers (VCSELs). The study is performed with a quantum-corrected semiclassical approach, where tunneling is described rigorously with a nonequilibrium Green\u27s function formalism based on a multiband description of the electronic structure. Validated with experimental results, the proposed approach provides a quantum -kinetic perspective of the tunneling process and paves the way toward a comprehensive theory of VCSELs, bridging the gap between semiclassical and quantum simulations