Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction

Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.Comment: 16 pages, 4 figure

Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena

Disorder, spin-orbit, and interaction effects in dilute Ga1−xMnxAs{\rm Ga}_{1-x}{\rm Mn}_x{\rm As}

We derive an effective Hamiltonian for ${\rm Ga}_{1-x}{\rm Mn}_x {\rm As}$ in the dilute limit, where ${\rm Ga}_{1-x}{\rm Mn}_x {\rm As}$ can be described in terms of spin $F=3/2$ polarons hopping between the {\rm Mn} sites and coupled to the local {\rm Mn} spins. We determine the parameters of our model from microscopic calculations using both a variational method and an exact diagonalization within the so-called spherical approximation. Our approach treats the extremely large Coulomb interaction in a non-perturbative way, and captures the effects of strong spin-orbit coupling and Mn positional disorder. We study the effective Hamiltonian in a mean field and variational calculation, including the effects of interactions between the holes at both zero and finite temperature. We study the resulting magnetic properties, such as the magnetization and spin disorder manifest in the generically non-collinear magnetic state. We find a well formed impurity band fairly well separated from the valence band up to $x_{\rm active} \lesssim 0.015$ for which finite size scaling studies of the participation ratios indicate a localization transition, even in the presence of strong on-site interactions, where $x_{\rm active}<x_{\rm nom}$ is the fraction of magnetically active Mn. We study the localization transition as a function of hole concentration, Mn positional disorder, and interaction strength between the holes.Comment: 15 pages, 12 figure

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer

Positional Disorder, Spin-Orbit Coupling and Frustration in GaMnAs

We study the magnetic properties of metallic GaMnAs. We calculate the effective RKKY interaction between Mn spins using several realistic models for the valence band structure of GaAs. We also study the effect of positional disorder of the Mn on the magnetic properties. We find that the interaction between two Mn spins is anisotropic due to spin-orbit coupling within both the so-called spherical approximation and in the more realistic six band model. The spherical approximation strongly overestimates this anistropy, especially for short distances between Mn ions. Using the obtained effective Hamiltonian we carry out Monte Carlo simulations of finite and zero temperature magnetization and find that, due to orientational frustration of the spins, non-collinear states appear in both valence band approximations for disordered, uncorrelated Mn impurities in the small concentration regime. Introducing correlations among the substitutional Mn positions or increasing the Mn concentration leads to an increase in the remnant magnetization at zero temperature and an almost fully polarized ferromagnetic state.Comment: 17 Pages, 13 Figure

Smell, Taste, and Temperature Interfaces

Everyday life hinges on smell, taste, and temperature-based experiences, from eating to detecting potential hazards (e.g., smell of rotten food, microbial threats, and non-microbial threats such as from hazardous gases) to responding to thermal behavioral changes. These experiences are formative as visceral, vital signals of information, and contribute directly to our safety, well-being, and enjoyment. Despite this, contemporary technology mostly stimulates vision, audition, and - more recently - touch, unfortunately leaving out the senses of smell taste and temperature. In the last decade, smell, taste, and temperature interfaces have gained a renewed attention in the field of Human Computer Interaction, fueled by the growth of virtual reality and wearable devices. As these modalities are further explored, it is imperative to discuss underlying cultural contexts of these experiences, how researchers can robustly stimulate and sense these modalities, and in what contexts such multisensory technologies are meaningful. This workshop addresses these topics and seeks to provoke critical discussions around chemo- and thermo-sensory HCI

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga dopings. The growth and post-growth annealing procedures were optimized for each nominal Mn doping in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-doping. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mn-doping. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band.Comment: 22 pages, 14 figure

Comprehensive Resources for Tomato Functional Genomics Based on the Miniature Model Tomato Micro-Tom

Tomato (Solanum lycopersicum L., Solanaceae) is an excellent model plant for genomic research of solanaceous plants, as well as for studying the development, ripening, and metabolism of fruit. In 2003, the International Solanaceae Project (SOL, www.sgn.cornell.edu ) was initiated by members from more than 30 countries, and the tomato genome-sequencing project is currently underway. Genome sequence of tomato obtained by this project will provide a firm foundation for forthcoming genomic studies such as the comparative analysis of genes conserved among the Solanaceae species and the elucidation of the functions of unknown tomato genes. To exploit the wealth of the genome sequence information, there is an urgent need for novel resources and analytical tools for tomato functional genomics. Here, we present an overview of the development of genetic and genomic resources of tomato in the last decade, with a special focus on the activities of Japan SOL and the National Bio-Resource Project in the development of functional genomic resources of a model cultivar, Micro-Tom

Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors

The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these materials have suggested that the polaron-polaron interaction is ferromagnetic, in contrast to the antiferromagnetic carrier-carrier interactions that are characteristic of nonmagnetic semiconductors. To explain this behavior, a model has been developed in which polarons interact via both the standard direct carrier-carrier exchange interaction (due to virtual carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due to the interactions of polarons with magnetic ions in an interstitial region). Using a variational procedure, the optimal values of the model parameters were determined as a function of temperature. At temperatures of interest, the parameters describing polaron-polaron interactions were found to be nearly temperature-independent. For reasonable values of these constant parameters, we find that indirect ferromagnetic interactions can dominate the direct antiferromagnetic interactions and cause the polarons to align. This result supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure