541 research outputs found
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction
Current-driven magnetization reversal in a ferromagnetic semiconductor based
(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Magnetoresistance measurements combined with current pulse application on a
rectangular 1.5 x 0.3 um^2 device revealed that magnetization switching occurs
at low critical current densities of 1.1 - 2.2 x 10^5 A/cm^2 despite the
presence of spin-orbit interaction in the p-type semiconductor system. Possible
mechanisms responsible for the effect are discussed.Comment: 16 pages, 4 figure
Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors
The Mott relation between the electrical and thermoelectric transport
coefficients normally holds for phenomena involving scattering. However, the
anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit
interaction. In this work, we have simultaneously measured AHE and the
anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films,
and observed an exceptionally large ANE at zero magnetic field. We further show
that AHE and ANE share a common origin and demonstrate the validity of the Mott
relation for the anomalous transport phenomena
Disorder, spin-orbit, and interaction effects in dilute
We derive an effective Hamiltonian for in
the dilute limit, where can be described in
terms of spin polarons hopping between the {\rm Mn} sites and coupled
to the local {\rm Mn} spins. We determine the parameters of our model from
microscopic calculations using both a variational method and an exact
diagonalization within the so-called spherical approximation. Our approach
treats the extremely large Coulomb interaction in a non-perturbative way, and
captures the effects of strong spin-orbit coupling and Mn positional disorder.
We study the effective Hamiltonian in a mean field and variational calculation,
including the effects of interactions between the holes at both zero and finite
temperature. We study the resulting magnetic properties, such as the
magnetization and spin disorder manifest in the generically non-collinear
magnetic state. We find a well formed impurity band fairly well separated from
the valence band up to for which finite size
scaling studies of the participation ratios indicate a localization transition,
even in the presence of strong on-site interactions, where is the fraction of magnetically active Mn. We study the
localization transition as a function of hole concentration, Mn positional
disorder, and interaction strength between the holes.Comment: 15 pages, 12 figure
Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy
anisotropy axis is investigated by means of several techniques, that yield a
consistent set of data on the magnetic properties and the domain structure of
this diluted ferromagnetic semiconductor. The magnetic layer was grown under
tensile strain on a relaxed GaInAs buffer layer using a procedure that limits
the density of threading dislocations. Magnetometry, magneto-transport and
polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality
of this layer, in particular through its high Curie temperature (130 K) and
well-defined magnetic anisotropy. We show that magnetization reversal is
initiated from a limited number of nucleation centers and develops by easy
domain wall propagation. Furthermore, MOKE microscopy allowed us to
characterize in detail the magnetic domain structure. In particular we show
that domain shape and wall motion are very sensitive to some defects, which
prevents a periodic arrangement of the domains. We ascribed these defects to
threading dislocations emerging in the magnetic layer, inherent to the growth
mode on a relaxed buffer
Positional Disorder, Spin-Orbit Coupling and Frustration in GaMnAs
We study the magnetic properties of metallic GaMnAs. We calculate the
effective RKKY interaction between Mn spins using several realistic models for
the valence band structure of GaAs. We also study the effect of positional
disorder of the Mn on the magnetic properties. We find that the interaction
between two Mn spins is anisotropic due to spin-orbit coupling within both the
so-called spherical approximation and in the more realistic six band model. The
spherical approximation strongly overestimates this anistropy, especially for
short distances between Mn ions. Using the obtained effective Hamiltonian we
carry out Monte Carlo simulations of finite and zero temperature magnetization
and find that, due to orientational frustration of the spins, non-collinear
states appear in both valence band approximations for disordered, uncorrelated
Mn impurities in the small concentration regime. Introducing correlations among
the substitutional Mn positions or increasing the Mn concentration leads to an
increase in the remnant magnetization at zero temperature and an almost fully
polarized ferromagnetic state.Comment: 17 Pages, 13 Figure
Smell, Taste, and Temperature Interfaces
Everyday life hinges on smell, taste, and temperature-based experiences, from eating to detecting potential hazards (e.g., smell of rotten food, microbial threats, and non-microbial threats such as from hazardous gases) to responding to thermal behavioral changes. These experiences are formative as visceral, vital signals of information, and contribute directly to our safety, well-being, and enjoyment. Despite this, contemporary technology mostly stimulates vision, audition, and - more recently - touch, unfortunately leaving out the senses of smell taste and temperature. In the last decade, smell, taste, and temperature interfaces have gained a renewed attention in the field of Human Computer Interaction, fueled by the growth of virtual reality and wearable devices. As these modalities are further explored, it is imperative to discuss underlying cultural contexts of these experiences, how researchers can robustly stimulate and sense these modalities, and in what contexts such multisensory technologies are meaningful. This workshop addresses these topics and seeks to provoke critical discussions around chemo- and thermo-sensory HCI
Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As
We report on a systematic study of optical properties of (Ga,Mn)As epilayers
spanning the wide range of accessible substitutional Mn_Ga dopings. The growth
and post-growth annealing procedures were optimized for each nominal Mn doping
in order to obtain films which are as close as possible to uniform
uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the
mid-infrared absorption spectra whose position exhibits a prevailing blue-shift
for increasing Mn-doping. In the visible range, a peak in the magnetic circular
dichroism blue shifts with increasing Mn-doping. These observed trends confirm
that disorder-broadened valence band states provide a better one-particle
representation for the electronic structure of high-doped (Ga,Mn)As with
metallic conduction than an energy spectrum assuming the Fermi level pinned in
a narrow impurity band.Comment: 22 pages, 14 figure
Comprehensive Resources for Tomato Functional Genomics Based on the Miniature Model Tomato Micro-Tom
Tomato (Solanum lycopersicum L., Solanaceae) is an excellent model plant for genomic research of solanaceous plants, as well as for studying the development, ripening, and metabolism of fruit. In 2003, the International Solanaceae Project (SOL, www.sgn.cornell.edu ) was initiated by members from more than 30 countries, and the tomato genome-sequencing project is currently underway. Genome sequence of tomato obtained by this project will provide a firm foundation for forthcoming genomic studies such as the comparative analysis of genes conserved among the Solanaceae species and the elucidation of the functions of unknown tomato genes. To exploit the wealth of the genome sequence information, there is an urgent need for novel resources and analytical tools for tomato functional genomics. Here, we present an overview of the development of genetic and genomic resources of tomato in the last decade, with a special focus on the activities of Japan SOL and the National Bio-Resource Project in the development of functional genomic resources of a model cultivar, Micro-Tom
Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors
The magnetic behavior of insulating doped diluted magnetic semiconductors
(DMS) is characterized by the interaction of large collective spins known as
bound magnetic polarons. Experimental measurements of the susceptibility of
these materials have suggested that the polaron-polaron interaction is
ferromagnetic, in contrast to the antiferromagnetic carrier-carrier
interactions that are characteristic of nonmagnetic semiconductors. To explain
this behavior, a model has been developed in which polarons interact via both
the standard direct carrier-carrier exchange interaction (due to virtual
carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due
to the interactions of polarons with magnetic ions in an interstitial region).
Using a variational procedure, the optimal values of the model parameters were
determined as a function of temperature. At temperatures of interest, the
parameters describing polaron-polaron interactions were found to be nearly
temperature-independent. For reasonable values of these constant parameters, we
find that indirect ferromagnetic interactions can dominate the direct
antiferromagnetic interactions and cause the polarons to align. This result
supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure
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