14 research outputs found
Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect
We have performed low-temperature in-plane magnetotransport measurements on
two-dimensional electron systems induced by deposition of Ag at {\it in situ}
cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed
even at low magnetic fields around 2 T. The surface electron density and the
electron mobility exhibit strong dependence on the Ag-coverage and the
annealing temperature in the range of 15-40 K. The annealing effect suggests
that the surface morphology strongly affects the properties of the
two-dimensional electron systems.Comment: 3 pages, 2 figure
Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces
Magnetotransport measurements have been performed on two-dimensional electron
gases formed at InAs(110) surfaces covered with a submonolayer of Fe.
Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance
between zero-field-cooling procedures and field-cooling procedures, and
logarithmic time-dependent relaxation after magnetic field sweep are clearly
observed at 1.7 K for a coverage of 0.42 monolayer. These features are
associated with spin-glass ordering in the Fe film.Comment: 4 pages, 3 figure
Well-width dependence of valley splitting in Si/SiGe quantum wells
The valley splitting in Si two-dimensional electron systems is studied using
Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps
for 4 and 5.3 nm QWs, obtained from the temperature dependence of the
longitudinal resistivity at the Landau level filling factor , are much
larger than those for 10 and 20 nm QWs. This is consistent with the well-width
dependence of the bare valley splitting estimated from the comparison with the
Zeeman splitting in the Shubnikov-de Haas oscillations.Comment: 3 pages, 2 figure
Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well
We study magnetotransport in a high mobility Si two-dimensional electron
system by in situ tilting of the sample relative to the magnetic field. A
pronounced dip in the longitudinal resistivity is observed during the Landau
level crossing process for noninteger filling factors. Together with a Hall
resistivity change which exhibits the particle-hole symmetry, this indicates
that electrons or holes in the relevant Landau levels become localized at the
coincidence where the pseudospin-unpolarized state is expected to be stable.Comment: 4 pages, 4 figure
Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
Cyclotron resonance of two-dimensional electrons is studied at low
temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which
exhibits a metallic temperature dependence of dc resistivity . The
relaxation time shows a negative temperature dependence, which
is similar to that of the transport scattering time obtained from
. The ratio at 0.4 K increases as the electron
density decreases, and exceeds unity when approaches the critical
density for the metal-insulator transition.Comment: 4 pages, 3 figure
Alkali-metal-induced Fermi level and two dimensional electrons at cleaved InAs(110) surfaces
Low-temperature Hall measurements have been performed on two-dimensional
electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved
surfaces of p-type InAs. The surface donor level, at which the Fermi energy of
the 2DEG is pinned, is calculated from the observed saturation surface electron
density using a surface potential determined self-consistently. The results are
compared to those of previous photoelectron spectroscopy measurements.Comment: 3 pages, 4 figure