Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels

A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced decoupling of the hyperfine interaction between electron and nuclear spins, we obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By a comparison of these two spectra, the values of the Knight shift can be given for the nuclear spins polarized dynamically in the region between the relevant edge channels in a single two-dimensional electron system, indicating that this method has a very high sensitivity compared to a conventional NMR technique.Comment: 4 pages, 4 figures, to appear in Applied Physics Letter

Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.Comment: 3 pages, 4 figures, submitted to Appl. Phys. Let

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.Comment: 4 pages, 4 figure

Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect

We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of electrons to the upper Landau subband with opposite spin polarity dynamically polarizes nuclear spins through the hyperfine interaction. The polarized nuclear spins in turn accelerate the QHE breakdown, leading to hysteretic voltage-current characteristics of the quantum Hall conductor.Comment: 3 pages, 4 figures, submitted to Appl. Phys. Let

Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins shows Rabi oscillations, which is detected by measuring longitudinal voltage of the QH conductor.Comment: 3 pages, 4 figure

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.Comment: 4 pages, 3 figure

Impurity and edge roughness scattering in armchair graphene nanoribbons: Boltzmann approach

The conductivity of armchair graphene nanoribbons in the presence of short-range impurities and edge roughness is studied theoretically using the Boltzmann transport equation for quasi-one-dimensional systems. As the number of occupied subbands increases, the conductivity due to short-range impurities converges towards the two-dimensional case. Calculations of the magnetoconductivity confirm the edge-roughness-induced dips at cyclotron radii close to the ribbon width suggested by the recent quantum simulations

Imaging ballistic carrier trajectories in graphene using scanning gate microscopy

We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.This work was partly supported by the EPSRC; a Grant-in-Aid for Scientific Research on Innovative Areas “Science of Atomic Layers” from the Ministry of Education, Culture, Sports, Science and Technology (MEXT); the Project for Developing Innovation Systems of MEXT; the Grants-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (JSPS); and the CREST, Japan Science and Technology Agency.This is the author accepted manuscript. The final version is available from AIP via http://dx.doi.org/10.1063/1.493747