Improving the performance of printable carbon electrodes by femtosecond laser treatment

Low-cost carbon-conductive films were screen-printed on a Plexiglas® substrate, and then, after a standard annealing procedure, subjected to femtosecond (fs) laser treatments at different values of total accumulated laser fluence ΦA. Four-point probe measurements showed that, if ΦA > 0.3 kJ/cm2, the sheet resistance of laser-treated films can be reduced down to about 15 Ω/sq, which is a value more than 20% lower than that measured on as-annealed untreated films. Furthermore, as pointed out by a comprehensive Raman spectroscopy analysis, it was found that sheet resistance decreases linearly with ΦA, due to a progressively higher degree of crystallinity and stacking order of the graphitic phase. Results therefore highlight that fs-laser treatment can be profitably used as an additional process for improving the performance of printable carbon electrodes, which have been recently proposed as a valid alternative to metal electrodes for stable and up-scalable perovskite solar cells

Aluminum (Oxy)nitride thin films grown by fs-PLD as electron emitters for thermionic applications

Thin films based on aluminum nitride were obtained by fs-laser assisted Pulsed Laser Deposition (fs-PLD) at room temperature on tantalum substrates for studying the electron emission performance in the temperature range 700- 1600 °C, so to investigate the possibility of their exploitation as thermionic cathodes. Results of structural, chemical and morphological analyses show the growth of nanostructured thin films with a significant oxygen contamination, forming a mixture of crystalline aluminum nitride and aluminum oxide as well as metallic aluminum inclusions. Despite the considerable presence of oxygen, the developed cathodes demonstrate to possess promising thermionic emission characteristics, with a work function of 3.15 eV, a valuable Richardson constant of 20.25 A/(cm²K²), and a highly thermo-electronic stability up to operating temperatures of 1600 °C

LIPSS Applied to Wide Bandgap Semiconductors and Dielectrics: Assessment and Future Perspectives

With the aim of presenting the processes governing the Laser-Induced Periodic Surface Structures (LIPSS), its main theoretical models have been reported. More emphasis is given to those suitable for clarifying the experimental structures observed on the surface of wide bandgap semiconductors (WBS) and dielectric materials. The role played by radiation surface electromagnetic waves as well as Surface Plasmon Polaritons in determining both Low and High Spatial Frequency LIPSS is briefly discussed, together with some experimental evidence. Non-conventional techniques for LIPSS formation are concisely introduced to point out the high technical possibility of enhancing the homogeneity of surface structures as well as tuning the electronic properties driven by point defects induced in WBS. Among these, double- or multiple-fs-pulse irradiations are shown to be suitable for providing further insight into the LIPSS process together with fine control on the formed surface structures. Modifications occurring by LIPSS on surfaces of WBS and dielectrics display high potentialities for their cross-cutting technological features and wide applications in which the main surface and electronic properties can be engineered. By these assessments, the employment of such nanostructured materials in innovative devices could be envisaged

Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on sapphire substrates by metal-organic vapour phase epitaxy, were evaluated under X-ray irradiation (CuKα line, 8.05 keV) for the first time. Photoresponse linearity at low dose-rates (varying in the 10-200 μGy s−1 range), and excellent detection sensitivity (up to 342.3 μC Gy−1 cm−3), were demonstrated even at very low applied electric fields (down to 0.001 V μm−1). Photocurrent rise time was evaluated to be <0.5 s, and signal stability was assessed for exposure times up to 2 h, highlighting no degradation of the performance. These encouraging results, mostly due to the extremely low dark current measured (in the pA range), suggest that orthorhombic undoped κ-Ga2O3 is a promising material for the fabrication of sensitive and stable large-area X-ray detectors with minimum power consumption

Optical characteristics of nanostructured aluminium/diamond composite systems in the visible range

The inclusion of aluminium (Al) nanoparticles (NPs) in chemical vapor deposition (CVD) diamond structures was achieved by depositing Al thin films on commercial CVD single-crystal diamond plates, and then covering them by a CVD diamond thin film to encapsulate the metal NPs formed by the dewetting occurring during the CVD process. Morphology and composition are investigated, showing a peculiar structure formed by an Al/diamond composite with both Al NPs and Al2O3 islands included and surrounded in the diamond matrix, respectively. A mosaic-patterned homoepitaxial growth occurs for the capping diamond layer. The experimentally measured reflectivity matches the simulation of a system where the thickness of the Al/diamond composite layer is 1.80 ± 0.05 μm and the composition is 95 ± 2 % diamond and 5 ± 2 % Al. Simulations of the plasmonic response of Al NPs embedded in the diamond layer suggest that the decrease in transmission of the sample in the blue region of the spectrum is unlikely to be due to plasmonic absorption by the NPs. It is concluded that the shape of the transmission spectrum follows a Rayleigh-like scattering induced by the nanoporous diamond film. Ultrafast transient absorption measurements allow us to identify a sharp feature at 700 nm which can be associated with a modification of an interband transition in Al due to heating after photon absorption at 380 nm

Transport properties of photogenerated charge carriers in black diamond films

Surface nanostructured diamond films by ultrashort pulse laser treatment, named black diamond, demonstrated a huge increase in the photogeneration capability for photons with sub-bandgap energy (<5.47 eV). Here we analyze in detail the transport properties of photogenerated charge carriers in several black diamond samples, in order to better understand the electronic behavior of defect levels introduced by the laser treatment. If compared with the pristine diamond films, the mean charge carriers’ mobility-lifetime product, evaluated from the over bandgap photocurrent characteristics, remarkably increases in every black diamond set up to a defined absorbed accumulated laser fluence before decreasing at the highest fluence values. We attribute this effect to the laser-induced introduction of fast traps for one charge carrier type, that increases with fluence. At the same time, an increasing density of recombination centers, capturing permanently the charge carriers, is formed. A trade-off treatment condition can be found in order to maximize the sensitivity to sub-bandgap photons and the mean mobility-lifetime product as well as to limit the effect of recombination centers

Multi-Technique Approach for Work Function Exploration of Sc₂O₃ Thin Films

Thin films based on scandium oxide (Sc2O3) were deposited on silicon substrates to investigate the thickness effect on the reduction of work function. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), energy dispersive X-ray reflectivity (EDXR), atomic force microscopy (AFM), and ultraviolet photoelectron spectroscopy (UPS) measurements were performed on the films deposited by electron-beam evaporation with different nominal thicknesses (in the range of 2–50 nm) and in multi-layered mixed structures with barium fluoride (BaF2) films. The obtained results indicate that non-continuous films are required to minimize the work function (down to 2.7 eV at room temperature), thanks to the formation of surface dipole effects between crystalline islands and substrates, even if the stoichiometry is far from the ideal one (Sc/O = 0.38). Finally, the presence of BaF2 in multi-layered films is not beneficial for a further reduction in the work function

Surface Nanotexturing of Boron-Doped Diamond Films by Ultrashort Laser Pulses

Polycrystalline boron-doped diamond (BDD) films were surface nanotextured by femtosecond pulsed laser irradiation (100 fs duration, 800 nm wavelength, 1.44 J cm&minus;2 single pulse fluence) to analyse the evolution of induced alterations on the surface morphology and structural properties. The aim was to identify the occurrence of laser-induced periodic surface structures (LIPSS) as a function of the number of pulses released on the unit area. Micro-Raman spectroscopy pointed out an increase in the graphite surface content of the films following the laser irradiation due to the formation of ordered carbon sites with respect to the pristine sample. SEM and AFM surface morphology studies allowed the determination of two different types of surface patterning: narrow but highly irregular ripples without a definite spatial periodicity or long-range order for irradiations with relatively low accumulated fluences (&lt;14.4 J cm&minus;2) and coarse but highly regular LIPSS with a spatial periodicity of approximately 630 nm &plusmn; 30 nm for higher fluences up to 230.4 J cm&minus;2

Enhanced and Selective Absorption of Molybdenum Nanostructured Surfaces for Concentrated Solar Energy Applications

Surfaces of commercial molybdenum (Mo) plates have been textured by fs-laser treatments with the aim to form low-cost and efficient solar absorbers and substrates for thermionic cathodes in Concentrated Solar Power conversion devices. Morphological (SEM and AFM), optical (spectrophotometry), and structural (Raman spectroscopy) properties of the samples treated at different laser fluences (from 1.8 to 14 J/cm2) have been characterized after the laser treatments and also following long thermal annealing for simulating the operating conditions of thermionic converters. A significant improvement of the solar absorptance and selectivity, with a maximum value of about four times higher than the pristine sample at a temperature of 800 K, has been detected for sample surfaces treated at intermediate fluences. The effects observed have been related to the light trapping capability of the laser-induced nanotexturing, whereas a low selectivity, together with a high absorptance, could be revealed when the highest laser fluence was employed due to a significant presence of oxide species. The ageing process confirms the performance improvement shown when treated samples are used as solar absorbers, even though, due to chemical modification occurring at the surface, a decrease of the solar absorptance takes place. Interestingly, the sample showing the highest quantity of oxides preserves more efficiently the laser texturing. The observation of this behaviour allows to extend the applicability of the laser treatments since, by further nanostructuring of the Mo oxides, it could be beneficial also for sensing applications

Surface Nanotexturing of Boron-Doped Diamond Films by Ultrashort Laser Pulses

Polycrystalline boron-doped diamond (BDD) films were surface nanotextured by femtosecond pulsed laser irradiation (100 fs duration, 800 nm wavelength, 1.44 J cm−2 single pulse fluence) to analyse the evolution of induced alterations on the surface morphology and structural properties. The aim was to identify the occurrence of laser-induced periodic surface structures (LIPSS) as a function of the number of pulses released on the unit area. Micro-Raman spectroscopy pointed out an increase in the graphite surface content of the films following the laser irradiation due to the formation of ordered carbon sites with respect to the pristine sample. SEM and AFM surface morphology studies allowed the determination of two different types of surface patterning: narrow but highly irregular ripples without a definite spatial periodicity or long-range order for irradiations with relatively low accumulated fluences (&lt;14.4 J cm−2) and coarse but highly regular LIPSS with a spatial periodicity of approximately 630 nm ± 30 nm for higher fluences up to 230.4 J cm−2.Micro and Nano Engineerin