Diminution of the activity of B atoms by H-induced defects in H

Diborane and hydrogen ions were co-implanted into silicon using an implanter without an ion analyzer. The samples were annealed at 1000 °C for 30 min in argon atmosphere. Regions containing carriers became narrower with an increasing fraction of H2 gas in the source mixed gas: for example, carriers were limited only in a narrow region from the surface to $0.3\;\mu$m on silicon implanted with a mixed gas of 57% H2–43% B2H6. The width of the region containing carriers was approximately double that ($\sim 0.6\;\mu$m) on B-implanted silicon. On the other hand, the width of the region containing B atoms on the H2 and B2H6 co-implanted silicon were slightly narrower than that on B-implanted silicon. The region containing inactivated B atoms had a large number of defects and small crystallites