Influence of ZnO nanorods on the performance of MEH-PPV based OLED in near UV range

In this research the effect of ZnO nanorods is simulated and investigated on the performance of poly (2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylene vinylene (MEH-PPV) based organic light-emitting diode (OLED) located between two electrodes (ITO as an anode and Calcium as a cathode) for emitting in near ultraviolet (UV) region. To study the irradiation in these regions, three structures (ITO/MEH-PPV/Ca, ITO/ZnO/MEH-PPV/Ca and ITO/ZnO/ZnO NR/MEH-PPV/Ca) were considered. Results showed that the OLED simulated with ZnO nanorods had a better performance in comparison with two other structures with higher irradiation intensity at the wave length of 380 nm

Effect of seed layers on low-temperature, chemical bath deposited ZnO nanorods-based near UV-OLED performance

Low-temperature wet chemical bath deposition (CBD) method is one of the most efficient and least hazardous solution-based techniques which is widely employed to grow ZnO NRs. In CBD method, a seed layer is usually deposited on the substrate. In this paper, high quality ZnO and aluminum doped ZnO (AZO) seed layers are sputtered on the indium tin oxide (ITO) coated glass. In continue, aligned ZnO NRs are grown on the AZO and ZnO seed layers via CBD technique. The effect of the growth time and seed layer on the physical properties of as-grown ZnO NRs are investigated. According to the results, the seed layer plays an essential role on the growth orientation and growth rate of the ZnO NRs. The ZnO NRs grown on AZO seed layer are more aligned rather than ZnO seed layer due to their higher texture coefficients. The relative photoluminescence (PL) intensity ratio of near band emission (NBE) to deep level emission (DLE) (INBE/IDLE) for the ZnO NRs grown on AZO and ZnO seed layers are calculated as 7.45 and 2.62, respectively. To investigate the performance of the as-grown ZnO NRs, near ultraviolet organic light-emitting diodes (UV-OLEDs) using ZnO NRs array as n-type material and poly [2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) conjugated polymer as p-type material have been fabricated. The total concentration of traps (), the characteristic energies () and the turn-on voltages for the devices with the structures of ITO/AZO/ZnO NRs/MEH-PPV/Al (device A) and ITO/ZnO/ZnO NRs/MEH-PPV/Al (device B) are attained 7.65 × 1016 and 7.75 × 1016 cm−3, 0.232 and 0.206 eV, 23 and 21 V, respectively. Moreover, based on the electroluminescence (EL) spectra, the NBE peaks for device A and B are obtained nearly in the wavelengths of 382 and 388 nm, respectively. Finally, various charge carrier transportation processes of prepared UV-OLEDs have been studied, systematically