A Two-Dimensional Carbon Semiconductor

We show that patterned defects can be used to disrupt the sub-lattice symmetry of graphene so as to open up a band gap. This way of modifying graphene's electronic structure does not rely on external agencies, the addition of new elements or special boundaries. The method is used to predict a planar, low energy, graphene allotrope with a band gap of 1.2 eV. This defect engineering also allows semiconducting ribbons of carbon to be fabricated within graphene. Linear arrangements of defects lead to naturally embedded ribbons of the semiconducting material in graphene, offering the prospect of two-dimensional circuit logic composed entirely of carbon.Comment: 4 pages, 5 figure

Nano-Engineering Defect Structures on Graphene

We present a new way of nano-engineering graphene using defect domains. These regions have ring structures that depart from the usual honeycomb lattice, though each carbon atom still has three nearest neighbors. A set of stable domain structures is identified using density functional theory (DFT), including blisters, ridges, ribbons, and metacrystals. All such structures are made solely out of carbon; the smallest encompasses just 16 atoms. Blisters, ridges and metacrystals rise up out of the sheet, while ribbons remain flat. In the vicinity of vacancies, the reaction barriers to formation are sufficiently low that such defects could be synthesized through the thermally activated restructuring of coalesced adatoms.Comment: 4 pages, 5 figure