1,031 research outputs found
Narrow stripe AlGaAs lasers using double current confinement
Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have been fabricated. The double current confinement configuration, which is fabricated by a selective meltback‐growth technique, enables the current injection to be restricted to a very narrow section of the active layer. These lasers exhibit very strong antiguiding and operate in many longitudinal modes, which are characteristics of narrow stripe lasers. Potential applications of the twin vertical stripe configuration include arrays of optically coupled lasers and, if a real index waveguiding mechanism can be combined with double current confinement, low threshold lasers
Large optical cavity AlGaAs buried heterostructure window lasers
Large optical cavity buried heterostructure window lasers in which only the transparent AlGaAs waveguiding layers, and not the active layer, extend to the laser mirrors have been fabricated. These lasers have threshold currents and differential quantum efficiencies comparable to those of regular large optical cavity buried heterostructure lasers in which the active region extends to the laser mirrors, however the window lasers have been operated under pulsed conditions at three times the power at which otherwise identical lasers without windows degrade by catastrophic mirror damage
AlGaAs inverted strip buried heterostructure lasers
Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold currents and quantum efficiencies that are comparable to those of conventional buried heterostructure lasers. The optical mode is confined by a weakly guiding strip loaded waveguide which makes possible operation in the fundamental transverse mode for larger stripe widths than is possible for conventional buried heterostructure lasers. Scattering of the laser light by irregularities in the sidewalls of the waveguide, which can be a serious problem in conventional buried heterostructure lasers, is also greatly reduced in these lasers
AlGaAs lasers with micro-cleaved mirrors suitable for monolithic integration
A technique has been developed for cleaving the mirrors of AlGaAs lasers without cleaving the
substrate. Micro-cleaving involves cleaving a suspended heterostructure cantilever by ultrasonic
vibrations. Lasers with microcleaved mirrors have threshold currents and quantum efficiencies
identical to those of similar devices with conventionally cleaved mirrors
Mutual phase locking of a coupled laser diode-Gunn diode pair
Mutual phase locking has been achieved through series connection of a semiconductor laser and a Gunn diode oscillator. Experimental results obtained demonstrate a mutual interaction between the two oscillators which results in a short term Gunn diode oscillator stability and improved spectral purity of its output. We also observe a narrowing of laser pulses and an improvement in regularity
Variable frequency picosecond optical pulse generation from laser diodes by electrical feedback
High repetition rate picosecond optical pulse generation is achieved by providing electrical feedback (with and without external gain) to a self-pulsating laser diode. The feedback improves pulsation short-term stability (<25-kHz frequency jitter) and narrows the laser pulses (14 ps)
Single-carrier-type dominated impact ionisation in multilayer structures
A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers
A monolithically integrated optical repeater
A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser. The repeater makes use of three metal semiconductor field effect transistors, one of which is used as the optical detector. With light from an external GaAlAs laser incident on the detector, an overall optical power gain of 10 dB from both laser facets was obtained
InGaAsP p-i-n photodiodes for optical communication at the 1.3-µm wavelength
The preparation and properties of Cd-diffused p-n homojunction InGaAsP photodiodes designed specifically for operation at the 1.3-µm wavelength are described. At a reverse bias of 10 V, the dark current of these diodes was as low as 15 pA. The peak responsivity at 1.3-µm wavelength was 0.7 A/W. An impulse response (full width at half maximum) of 60 ps and a 3-dB bandwidth of 5.5 GHz were achieved.
Critical Behavior of Light
Light is shown to exhibit critical and tricritical behavior in passive
mode-locked lasers with externally injected pulses. It is a first and unique
example of critical phenomena in a one-dimensional many body light-mode system.
The phase diagrams consist of regimes with continuous wave, driven para-pulses,
spontaneous pulses via mode condensation, and heterogeneous pulses, separated
by phase transition lines which terminate with critical or tricritical points.
Enhanced nongaussian fluctuations and collective dynamics are observed at the
critical and tricritical points, showing a mode system analog of the critical
opalescence phenomenon. The critical exponents are calculated and shown to
comply with the mean field theory, which is rigorous in the light system.Comment: RevTex, 5 pages, 3 figure
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