Low-Temperature Characteristics of an AlN/Diamond Surface Acoustic Wave Resonator

Phonons confined in mechanical resonators can be coupled to a variety of quantum systems and are expected to be applied to hybrid quantum systems. Diamond surface acoustic wave (SAW) devices are capable of high efficiency in phonon interaction with color centers in diamond. The temperature dependence of the quality factor is crucial for inferring the governing mechanism of coupling efficiency between phonons and color centers in diamond. In this paper, we report on the temperature dependence of the quality factor of an AlN/diamond SAW device from room temperature to 5 K. The temperature dependence of the quality factor and resonant frequency suggests that the mechanism of SAW dissipation in the AlN/diamond SAW resonator at 5 GHz is the phonon-phonon scattering in the Akheiser region, and that further cooling can be expected to improve the quality factor. This result provides a crucial guideline for the future design of AlN/diamond SAW devices.Comment: 10 pages, 5 figure

Coherent Electric-Field Control of Orbital state in a Neutral Nitrogen-Vacancy Center

The coherent control of the orbital state is crucial for color centers in diamonds for realizing extremely low-power manipulation. Here, we propose the neutrally charged nitrogen-vacancy center, NV$^0$, as an ideal system for orbital control through electric fields. We estimate electric susceptibility in the ground state of NV$^0$ to be comparable to that in the excited state of NV$^-$. Also, we demonstrate coherent control of the orbital states of NV$^0$. The required power for orbital control is three orders of magnitude smaller than that for spin control, highlighting the potential for interfacing a superconducting qubit operated in a dilution refrigerator.Comment: 12 pages, 6 figure

Extension of the Coherence Time by Generating MW Dressed States in a Single NV Centre in Diamond

Nitrogen-vacancy (NV) centres in diamond hold promise in quantum sensing applications. A major interest in them is an enhancement of their sensitivity by the extension of the coherence time ($T_2$). In this report, we experimentally generated more than four dressed states in a single NV centre in diamond based on Autler-Townes splitting (ATS). We also observed the extension of the coherence time to $T_2 \sim$ 1.5 ms which is more than two orders of magnitude longer than that of the undressed states. As an example of a quantum application using these results we propose a protocol of quantum sensing, which shows more than an order of magnitude enhancement in the sensitivity.Comment: 8 pages, 9 figure

Diabetes and hypertension markedly increased the risk of ischemic stroke associated with high serum resistin concentration in a general Japanese population: the Hisayama Study

<p>Abstract</p> <p>Background</p> <p>Resistin, secreted from adipocytes, causes insulin resistance in mice. The relationship between resistin and coronary artery disease is highly controversial, and the information regarding resistin and ischemic stroke is limited. In the present study, the association between serum resistin concentration and cardiovascular disease (CVD) was investigated in a general Japanese population.</p> <p>Methods</p> <p>A total of 3,201 community-dwelling individuals aged 40 years or older (1,382 men and 1,819 women) were divided into quintiles of serum resistin, and the association between resistin and CVD was examined cross-sectionally. The combined effect of either diabetes or hypertension and high serum resistin was also assessed. Serum resistin was measured using ELISA.</p> <p>Results</p> <p>Compared to those without CVD, age- and sex-adjusted mean serum resistin concentrations were greater in subjects with CVD (p = 0.002) or ischemic stroke (p < 0.001), especially in those with lacunar and atherothrombotic infarction, but not elevated in subjects with hemorrhagic stroke or coronary heart disease. When analyzed by quintile of serum resistin concentration, the age- and sex-adjusted odds ratio (OR) for having CVD and ischemic stroke increased with quintile of serum resistin (p for trends, 0.02 for CVD, < 0.001 for ischemic stroke), while such associations were not observed for hemorrhagic stroke or coronary heart disease. Compared to the first quintile, the age- and sex-adjusted OR of ischemic stroke was greater in the third (OR = 3.54; 95% confidence interval [CI], 1.17-10.67; p = 0.02), fourth (OR = 4.48; 95% CI, 1.53-13.09; p = 0.006), and fifth quintiles (OR = 4.70; 95% CI, 1.62-13.61; p = 0.004). These associations remained substantially unchanged even after adjustment for other confounding factors including high-sensitivity C-reactive protein. In the stratified analysis, the combination of high serum resistin and either diabetes or hypertension markedly increased the risk of ischemic stroke.</p> <p>Conclusion</p> <p>Elevated serum resistin concentration appears to be an independent risk factor for ischemic stroke, especially lacunar and atherothrombotic infarction in the general Japanese population. The combination of high resistin and the presence of either diabetes or hypertension increased the risk of ischemic stroke.</p

Transform-Limited Photon Emission From a Lead-Vacancy Center in Diamond Above 10 K

Transform-limited photon emission from quantum emitters is essential for high-fidelity entanglement generation. In this study, we report the coherent optical property of a single negatively-charged lead-vacancy (PbV) center in diamond. Photoluminescence excitation measurements reveal stable fluorescence with a linewidth of 39 MHz at 6 K, close to the transform-limit estimated from the lifetime measurement. We observe four orders of magnitude different linewidths of the two zero-phonon-lines, and find that that the phonon-induced relaxation in the ground state contributes to this huge difference in the linewidth. Due to the suppressed phonon absorption in the PbV center, we observe nearly transform-limited photon emission up to 16 K, demonstrating its high temperature robustness compared to other color centers in diamond.Comment: 13 pages,4 figure

Inversion channel diamond metaloxide-semiconductor field-effect transistor with normally off characteristics

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature. © The Author(s) 2016