The development and investigation of special power transistors and stand equipment for its control

The power transistor keys and quick-recovering diodes have been investigated. The purpose of the work: the development of the power transistor and diode elements resistant to the effects of gamma- and neutron radiations, lower temperatures and inverse currents, the methods of parameters control and technological seasonings, creation of the complex of the check-measuring stands. The main principles of designing the quick-acting diodes and transistor keys intended for operation in the inverter circuits have been determined. The constants for degradation resulting from the gamma-quantum and neutron radiation have been specified. Developed and introduced into production have been the series of the power transistors with the high stability to the effect of the penetrating radiation. The laws of changes of the main electrical parameters after radiation have been established. The grounds for designing the special stands have been created, the methods of the check have been developed. The technology and construction of manufacture of instruments and the test stands, the methods of the check and technological seasonings can be introduced in practice. A simplified inverter electrical circuit, improvement of its reliability and capacity is being reached. The field of application: the manufacture of the power semiconductor instruments and inverters on its baseAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio