Where is the pseudoscalar glueball ?

The pseudoscalar mesons with the masses higher than 1 GeV are assumed to belong to the meson decuplet including the glueball as the basis state supplementing the standard $SU(3)_F$ nonet of light $q\bar{q}$ states $(u,d,s)$. The decuplet is investigated by means of an algebraic approach based on hypothesis of vanishing the exotic $SU(3)_F$ commutators of "charges" and their time derivatives. These commutators result in a system of equations determining contents of the isoscalar octet state in the physical isoscalar mesons as well as the mass formula including all masses of the decuplet: $\pi(1300)$, K(1460), $\eta(1295)$, $\eta(1405)$ and $\eta(1475)$. The physical isoscalar mesons $\eta_i$, are expressed as superpositions of the "ideal" $q\bar{q}$ states ($N$ and $S$) and the glueball $G$ with the mixing coefficient matrix following from the exotic commutator restrictions. Among four one-parameter families of the calculated mixing matrix (numerous solutions result from bad quality of data on the $\pi(1300)$ and K(1460) masses) there is one family attributing the glueball-dominant composition to the $\eta(1405)$ meson. Similarity between the pseudoscalar and scalar decuplets, analogy between the whole spectra of the $0^{-+}$ and $0^{++}$ mesons and affinity of the glueball with excited $q\bar{q}$ states are also noticed.Comment: 18 pp., 2. figs., 2 tabs.; Published version. One of the authors withdraws his nam

Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors

It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.Comment: 5 pages, 1 figur

Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors

Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72, 205322 (2005)] is employed. The model combines the disorder-free Landauer-B\"uttiker formalism with the tight-binding description of the host band structure. The obtained results show how much the spherical 4x4 kp model [Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the adiabatic limit, and reveal the dependence of DWR on the magnetization profile and crystallographic orientation of the wall.Comment: 4 pages, 4 figures, submitted to Phys. Rev. B - Rapid Com