Photon emission and photoproduction processes in bent single crystals

The process of photon emission by high energy electrons or positrons moving in a bent single crystal was considered. The spectrum of energy losses by particles and polarization of emitted photons were calculated. The corrections due to multiphoton emission were obtained. Photoproduction process via electron-positron pairs in a bent single crystal was also studied. Total cross-section at different bending radii was calculated for different initial polarization states of high energy photons

On volume reflection of ultrarelativistic particles in single crystals

The analytical description of the volume reflection of the charged ultrarelativistic particles in bent single crystals is considered. The relation describing the angle of volume reflection as a function of the transversal energy is obtained. The different angle distributions of the scattered protons in the single crystals are found. Results of calculations for 400 GeV protons scattered by the silicon single crystal are presented.Comment: Comments: Latex, 9 pages, 9 fig