60 research outputs found

    Structural and magnetic properties of amorphous Co-W alloyed nanoparticles

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    18 páginas, 20 figuras, 4 tablas.-- PACS number(s): 75.75.Fk, 75.50.Kj, 75.30.Gw, 61.46.Df.-- et al.et al.W-capped Co nanoparticles dispersed in an alumina matrix are studied by means of high-resolution transmission electron microscopy, extended x-ray absorption fine structure, SQUID-based magnetic measurements, dc magnetization, ac magnetic susceptibility, and x-ray magnetic circular dichroism. Results show the formation of amorphous Co-W alloy nanoparticles, the magnetic properties of which are modified by the amount of W or Co present in the samples. The average Co magnetic moment depends on the number of W atoms surrounding it. Co-W particles show superparamagnetic behavior and are described as an array of noninteracting particles with random anisotropy axes and an average moment per particle proportional to the particle volume and to the average Co moment for each alloy composition. Values of the magnetic anisotropy constant of the particles are on the order of 106 erg/cm3, higher than that of bulk Co. Evidence of short-range ordering within each amorphous particle is found that provides insight of the origin of their magnetic anisotropy.The financial support of MICINN-FEDER MAT08/1077 and Aragonese IMANA project is acknowledged. A.I.F. acknowledges a CSIC JAE2008-Predoc grant.Peer reviewe

    Exciton Footprint of Self-assembled AlGaAs Quantum Dots in Core-Shell Nanowires

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    Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots nested in the shell of GaAs-AlGaAs core-shell nanowires. We used optical spectroscopy to resolve the splitting resulting from the exchange terms and extract the main parameters of the emitters. Our results indicate that the quantum dots can host neutral as well as charges excitonic complexes and that the excitons exhibit a slightly elongated footprint, with the main axis tilted with respect to the growth axis. GaAs-AlGaAs emitters in a nanowire are particularly promising for overcoming the limitations set by strain in other systems, with the benefit of being integrated in a versatile photonic structure

    Metallic diluted dimerization in VO2 tweeds

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    Altres ajuts: ICN2 was also supported by the CERCA programme (Generalitat de Catalunya).The observation of electronic phase separation textures in vanadium dioxide, a prototypical electron-correlated oxide, has recently added new perspectives on the long standing debate about its metal-insulator transition and its applications. Yet, the lack of atomically resolved information on phases accompanying such complex patterns still hinders a comprehensive understanding of the transition and its implementation in practical devices. In this work, atomic resolution imaging and spectroscopy unveils the existence of ferroelastic tweed structures on ≈5 nm length scales, well below the resolution limit of currently used spectroscopic imaging techniques. Moreover, density functional theory calculations show that this pretransitional fine-scale tweed, which on average looks and behaves like the standard metallic rutile phase, is in fact weaved by semi-dimerized chains of vanadium in a new monoclinic phase that represents a structural bridge to the monoclinic insulating ground state. These observations provide a multiscale perspective for the interpretation of existing data, whereby phase coexistence and structural intermixing can occur all the way down to the atomic scale

    Synthesis of PbIâ‚‚ single-layered inorganic nanotubes encapsulated within carbon nanotubes

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    The template assisted growth of single-layered inorganic nanotubes is reported. Single-crystalline lead iodide single-layered nanotubes have been prepared using the inner cavities of carbon nanotubes as hosting templates. The diameter of the resulting inorganic nanotubes is merely dependent on the diameter of the host. This facile method is highly versatile opening up new horizons in the preparation of single-layered nanostructures

    Phase Competitions behind the Giant Magnetic Entropy Variation: Gd5Si2Ge2 and Tb5Si2Ge2 Case Studies

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    Magnetic materials with strong spin-lattice coupling are a powerful set of candidates for multifunctional applications because of their multiferroic, magnetocaloric (MCE), magnetostrictive and magnetoresistive effects. In these materials there is a strong competition between two states (where a state comprises an atomic and an associated magnetic structure) that leads to the occurrence of phase transitions under subtle variations of external parameters, such as temperature, magnetic field and hydrostatic pressure. In this review a general method combining detailed magnetic measurements/analysis and first principles calculations with the purpose of estimating the phase transition temperature is presented with the help of two examples (Gd5Si2Ge2 and Tb5Si2Ge2). It is demonstrated that such method is an important tool for a deeper understanding of the (de)coupled nature of each phase transition in the materials belonging to the R5(Si,Ge)4 family and most possibly can be applied to other systems. The exotic Griffiths-like phase in the framework of the R5(SixGe1-x)4 compounds is reviewed and its generalization as a requisite for strong phase competitions systems that present large magneto-responsive properties is proposed

    Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

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    Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of vertical nanowires on silicon(111). These results open up the avenue towards the efficient integration of III-V nanowire arrays on the silicon platform

    Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

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    In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices
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