Improving RF characteristics of MEMS capacitive shunt switches

characteristics of MEMS capacitive shunt switches, International review on modelling and simulations, vol. 2, no. 4, pp. 401-406. Available from Deakin Research Online

Determining RF MEMS switch parameter by neural networks

A challenge in designing a RF MEMS switch is the determination of its parameters to satisfy the application requirements. Often this is done through a set of comprehensive time consuming simulations. This paper employs neural networks and develops a supervised learner that is capable of determining S11 parameter for a RF MEMS shunt switch. The inputs are the length its L and the height of its gap. The outputs are S11s for eight different frequency points from 0 to V band. The developed learner helps prevent repetitive simulations when designing the specified switch. Simulation results are presented.<br /

Low actuation-voltage shift in MEMS switch using ramp dual-pulse

This paper proposes a ramp dual-pulse actuation-voltage waveform that reduces actuation-voltage shift in capacitive microelectromechanical system (MEMS) switches. The proposed waveform as well as two reported waveforms (dual pulse, and novel dual-pulse) are analyzed using equivalent-circuit and equation models. Based on the analysis outcome, the paper provides a clear understanding of trapped charge density in the dielectric. The results show that the proposed actuation-voltage waveform successfully reduces trapped charge and increases lifetime due to lowering of actuation-voltage shift. Using the proposed actuation-voltage waveform, the membrane reaches a steady state on the electrode faster.<br /

Design and simulation of a tunable MEMS filter for wireless biomedical signal transceivers

This paper presents a new architecture for a high quality tunable MEMS filter that can be used in wireless biomedical signal transceivers. It consists of a &pi; match circuit with two shunt capacitive coupling switches separated by a piece of high impedance short transmission line, and also a series switch placed at the quarter wavelength distance away from the &pi; match circuit. The low actuation voltage and also tunability are important features of the design objective. All portions of the filter can be realized simultaneously. Thus, the filter docs not require any extra steps during its fabrication, and is not costly. The simulation results confirm the good performance of the filter.<br /

An ultra low power OTA with improved unity gain bandwidth product

An operational transconductance amplifier (OTA) using dynamic threshold MOS (DTMOS) and hybrid compensation technique is presented in this paper. The proposed topology is based on a bulk and gate driven input differential pair. Two separate capacitors are employed for the OTA compensation where one of them is used in a signal path and the other one in a non-signal path. The circuit is designed in the 0.18&mu;m CMOS TSMC technology. The proposed design technique shows remarkable enhancement in unity gain-bandwidth and also in DC gain compared to the bulk driven input differential pair OTAs. The Hspice simulation results show that the amplifier has a 92dB open-loop DC gain and a unity gain-bandwidth of 135kHz while operating at 0.4V supply voltage. The total power consumption is as low as 386nW which makes it suitable for low-power bio-medical and bio-implantable applications

Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

Radio frequency micro electro mechanical systems (RF MEMS) have enabled a new generation of devices that bring many advantages due to their very high performances. There are many incentives for the integration of the RF MEMS switches and electronic devices on the same chip. However, the high actuation voltage of RF MEMS switches compared to electronic devices poses a major problem. By reducing the actuation voltage of the RF MEMS switch, it is possible to integrate it into current electronic devices. Lowering the actuation voltage will have an impact on RF parameters of the RF MEMS switches. This investigation focuses on recent progress in reducing the actuation voltage with an emphasis on a modular approach that gives acceptable design parameters. A number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested

A new gm-boosting current reuse CMOs folded cascode LNA

In this paper, a new gain enhancement technique which is recommended for folded cascode LNA structures at low voltage and low power applications is presented. In order to increase power gain, a new modified version of gm-boosting technique is employed which increases the power gain while consuming no extra power. The new topology shares its DC current at the folded stage in order to reduce power dissipation associated with the gm-boosting technique. The proposed technique reduces power dissipation almost 27%, additionally; other parameters such as power gain and noise figure have been slightly improved. In the proposed LNA, power gain and noise figure are15dB and 3.2dB respectively. It consumes 1.3mW under 0.6 supply voltage

Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S21 and S11 are less than &minus;10dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1V and 0.3V, respectively

Impact of carbon material on RF MEMS switch

Carbon materials such as Graphene and carbon nano tube promise a new generation of RF NEMS devices that bring many advantages due to their very high performances such as low mass, high Young\u27s modulus and electrical conductivity. In this paper, the properties of Graphene for RF M/NEMS applications are briefly described. We compare the mechanical behaviour of Graphene switches with metallic RF MEMS switches such as Aluminium and Gold. The analytical study and simulation results show that the actuation voltage of Al and Au switches is high (35 V) whereas the actuation voltage for the Graphene switch is low (7.7 V). Also, the switching time of Graphene switch is 3.5 ns while the switching time for metallic switches is approximately 17&mu;s