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3 research outputs found

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Author: Delage S.
Dyakonova N.
Fatimy A. El
Gaquiere C.
Knap W.
Madjour K.
Meziani Y.
Otsuji T.
Poisson M. A.
Prystawko P.
Skierbiszewski C.
Theron D.
Vandenbrouk S.
Publication venue: 'AIP Publishing'
Publication date: 27/01/2012
Field of study

Tohoku University Repository (TOUR) / 東北大学機関リポジトリ

Institutional Repositories DataBase (IRDB)

Sub-terahertz resistive mixing in a AlGaN/GaN HEMT

Author: Akalin T.
Delage S.
Ducournau G.
Gaquiere C.
Lampin J.F.
Lepilliet S.
Madjour K.
Poisson M.A.
Publication venue: 'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date: 01/01/2010
Field of study

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Author: Delage S.
Dyakonova N.
El Fatimy A.
Gaquiere C.
Knap W.
Madjour K.
Meziani Y.
Otsuji T.
Poisson M. A.
Prystawko P.
Skierbiszewski C.
Theron D.
Vandenbrouk S.
Publication venue: American Institute of Physics
Publication date: 27/01/2012
Field of study

Institutional Repositories DataBase (IRDB)

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