Enhancing AmBC Systems with Deep Learning for Joint Channel Estimation and Signal Detection

The era of ubiquitous, affordable wireless connectivity has opened doors to countless practical applications. In this context, ambient backscatter communication (AmBC) stands out, utilizing passive tags to establish connections with readers by harnessing reflected ambient radio frequency (RF) signals. However, conventional data detectors face limitations due to their inadequate knowledge of channel and RF-source parameters. To address this challenge, we propose an innovative approach using a deep neural network (DNN) for channel state estimation (CSI) and signal detection within AmBC systems. Unlike traditional methods that separate CSI estimation and data detection, our approach leverages a DNN to implicitly estimate CSI and simultaneously detect data. The DNN model, trained offline using simulated data derived from channel statistics, excels in online data recovery, ensuring robust performance in practical scenarios. Comprehensive evaluations validate the superiority of our proposed DNN method over traditional detectors, particularly in terms of bit error rate (BER). In high signal-to-noise ratio (SNR) conditions, our method exhibits an impressive approximately 20% improvement in BER performance compared to the maximum likelihood (ML) approach. These results underscore the effectiveness of our developed approach for AmBC channel estimation and signal detection. In summary, our method outperforms traditional detectors, bolstering the reliability and efficiency of AmBC systems, even in challenging channel conditions.Comment: Accepted for publication in the IEEE Transactions on Communication

Kinetics of exciton photoluminescence in type-II semiconductor superlattices

The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness. Expressions that relate the parameters of the luminescence kinetics with statistical characteristics of the rough interface are obtained. The mean height and length of roughnesses in GaAs/AlAs superlattices are estimated from the experimental data.Comment: 3 PostScript figure

Influence of high-index GaAs substrates on the 2D electron density of

In this paper, we report the theoretical predictions of a high-index GaAs substrate ((111)A and (311)A) on the subband structure and thereafter on the 2D electron density of Si δ-doped Al0.33Ga0.67As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor (pHEMT) with an additional InxGa1-xAs (x > 0.15) thin layer embedded in the channel. We have seen that the electronic structures and the electron density are quite sensitive to the additional InxGa1-xAs (x > 0.15) layer thickness, indium composition and to their position in the channel. An optimal position of the additional InxGa1-xAs layer was found to be corresponding to the maximum of the first eigen envelope function for the different growth directions. We report that the optimised electron density is obtained in the structure grown on (111)A GaAs substrate. In this case the electron transfer is significantly higher than those grown on (311)A and (001) GaAs substrates respectively

Non-covalent biofunctionalization of single-walled carbon nanotubes via biotin attachment by π-stacking interactions and pyrrole polymerization

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Electrochemical Characterization of Biotin Functionalized and Regular Single-Walled Carbon Nanotube Coatings. Application to Amperometric Glucose Biosensors

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Amperometric Biosensors Based on Biotinylated Single-Walled Carbon Nanotubes

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Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

In this work we report on the characteristics of (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques such as capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements were used to characterize the diodes. We observed an hysteresis phenomenon on the C-V characteristics in the Schottky diode. The parasitic effect can be attributed to the presence of traps in the heterostructure. Deep defects analysis was performed by deep-level transient spectroscopy (DLTS). One hole trap have been detected with an activation energy and a capture cross-section of 0.75 eV and 1.093 × 10−11 cm2. The localization and the identification of this trap have occurred and a correlation between the defect and the hysteresis phenomenon has been discussed. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect