Resistivity of Evaporated Tellurium Films

The tellurium film was made by the vacuum evaporation and its resistivity was measured at various temperatures. When the substrate was kept at the room temperature during evaporation, the film showed a log R-1/T curve, conspicuously different from that of the bulk. By the heat treatment or by the electron bombardment, the resistivity was found to change irreversibly, becoming nearer to that of a bulk specimen. These features were explained by the crystallization of the amorphous deposit in the film. On the other hand, when the tellurium was deposited on a hot substrate, about 470°K in temperature, the resistivity of the film was found to be in good accordance with that of the bulk, giving the activation energies of 0.34 and 0.04 eV in the intrinsic and the extrinsic range, respectively