In-vitro antimicrobial and antioxidant activity of Argyreia cuneata (Willd.) Ker Gawl. (Convolvulaceae)

Objectives: Argyreia cuneata (Willd.) Ker Gawl. belongs to the family Convolvulaceae. The present study was performed to screen the potential of crude extract of various parts of A. cuneata to exhibit antimicrobial activity. Methods: Extraction of shade dried and powdered leaf, stem and flower of A. cuneata was carried out by maceration technique. Antibacterial and antifungal activity of extracts was evaluated by Agar well diffusion and Poisoned food technique respectively. Antioxidant activity was determined by DPPH radical scavenging, ABTS radical scavenging and ferric reducing assays. Results:  All extracts were effective in inhibiting test bacteria and the susceptibility of bacteria to extracts was in the order: Bacillus cereus > Shigella flexneri > Escherichia coli > Salmonella typhimurium. Leaf extract and stem extract exhibited highest and least antibacterial activity, respectively. Extracts were effective in causing inhibition of seed-borne fungi viz. Aspergillus niger and Bipolaris sp to >50%. Leaf extract exhibited marked antifungal activity followed by flower extract and stem extract. All extracts were shown to exhibit concentration dependent scavenging and reducing activity. Antioxidant activity of extracts observed was in the order: leaf extract > flower extract > stem extract.  Conclusion: Among various parts of A. cuneata, leaf extract exhibited marked antimicrobial and antioxidant activity. The plant can be employed as an effective antimicrobial and antioxidant agent in suitable form. Further studies may be undertaken to recover phytochemicals from the plant and to investigate the antimicrobial and antioxidant activity of isolated components. Keywords: Argyreia cuneata, Maceration, Antimicrobial, Agar well diffusion, Poisoned food technique, Antioxidan

A Genome-Wide SNP Scan Reveals Novel Loci for Egg Production and Quality Traits in White Leghorn and Brown-Egg Dwarf Layers

Availability of the complete genome sequence as well as high-density SNP genotyping platforms allows genome-wide association studies (GWAS) in chickens. A high-density SNP array containing 57,636 markers was employed herein to identify associated variants underlying egg production and quality traits within two lines of chickens, i.e., White Leghorn and brown-egg dwarf layers. For each individual, age at first egg (AFE), first egg weight (FEW), and number of eggs (EN) from 21 to 56 weeks of age were recorded, and egg quality traits including egg weight (EW), eggshell weight (ESW), yolk weight (YW), eggshell thickness (EST), eggshell strength (ESS), albumen height(AH) and Haugh unit(HU) were measured at 40 and 60 weeks of age. A total of 385 White Leghorn females and 361 brown-egg dwarf dams were selected to be genotyped. The genome-wide scan revealed 8 SNPs showing genome-wise significant (P<1.51E-06, Bonferroni correction) association with egg production and quality traits under the Fisher's combined probability method. Some significant SNPs are located in known genes including GRB14 and GALNT1 that can impact development and function of ovary, but more are located in genes with unclear functions in layers, and need to be studied further. Many chromosome-wise significant SNPs were also detected in this study and some of them are located in previously reported QTL regions. Most of loci detected in this study are novel and the follow-up replication studies may be needed to further confirm the functional significance for these newly identified SNPs

Growth of nanowires of beta-NaxV2O5 by metalorganic chemical vapor deposition

Films comprised of nanowires of beta-NaxV2O5 measuring 20-200 nm in diameter and 10-30 mum in length have been prepared on glass substrates by metalorganic chemical vapor deposition using the beta-diketonate complex, vanadyl acetyl acetonate, as precursor, but without the use of either templates or catalysts. Films consisting of nanowires of monophasic beta-NaxV2O5 with a preferred orientation along (h0l) are formed only at 550 degreesC, whereas those deposited at 540 degreesC comprise a mixture of nanowires (beta-NaxV2O5) and platelets (V2O5). The films deposited at lower temperatures are less crystalline and comprise a mixture of vanadium oxide phases. From the observations that nanowires are formed only in the narrow temperature range of 540-550 degreesC, and from the critical dependence of the formation of nanowires on the balance between the CVD growth rate and the evaporation rate of the film, it is inferred that the formation of nanowires of beta-NaxV2O5 is due to chemical vapor transport

Phase transformation and semiconductor-metal transition in thin films of VO2 deposited by low-pressure metalorganic chemical vapor deposition

Thin films of the semiconducting, monoclinic vanadium dioxide, VO2(M) have been prepared on ordinary glass by two methods: directly by low-pressure metalorganic chemical vapor deposition (MOCVD), and by argon-annealing films of the VO2(B) phase deposited by MOCVD. The composition and microstructure of the films have been examined by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Films made predominantly of either the B or the M phase, as deposited, can only be obtained over a narrow range of deposition temperatures. At the lower end of this temperature range, the as-deposited films are strongly oriented, although the substrate is glass. This can be understood from the drive to minimize surface energy. Films of the B phase have a platelet morphology, which leads to an unusual microstructure at the lower-deposition temperatures. Those grown at similar to370 degreesC convert to the metallic, rutile (R) phase when annealed at 550 degreesC, whereas those deposited at 420 degreesC transform to the R phase only at 580 degreesC. (When cooled to room temperature, the annealed films convert reversibly from the R phase to the M phase.) Electron microscopy shows that annealing leads to disintegration of the single crystalline VO2(B) platelets into small crystallites of VO2(R), although the platelet morphology is retained. When the annealing temperature is relatively low, these crystallites are nanometer sized. At a higher-annealing temperature, the transformation leads to well-connected and similarly oriented large grains of VO2(R), enveloped in the original platelet. The semiconductor-metal transition near 68 degreesC leads to a large jump in resistivity in all the VO2(M) films, nearly as large as in epitaxial films on single-crystal substrates. When the annealed films contain well-connected large grains, the transition is very sharp. Even when preferred orientation is present, the transition is not as sharp in as-deposited VO2(M), because the crystallites are not densely packed as in annealed VO2(B). However, the high degree of orientation in these films leads to a narrow temperature hysteresis. (C) 2002 American Institute of Physics

Microstructure and properties of VO2VO{_2} thin films deposited by MOCVD from vanadyl acetylacetonate

Thin films of vanadium dioxide have been deposited on glass by low pressure metal-organic chemical vapour deposition using the beta-diketonate complex, vanadyl acetylacetonate, as the precursor. It is found that nearly monophasic, monoclinic VO2(M) films are formed in the narrow temperature range 475-520 degreesC, films formed outside this range comprising significant proportions of other vanadium oxide phases beside VO2(M). The microstructure of these well-crystallized films varies significantly with temperature in this range. Films grown at 475 degreesC are dense and have a very strong (200) orientation. At 520 degreesC, films are somewhat porous, and display little preferred orientation. Film microstructure influences the semiconductor-metal transition noticeably. Films deposited at 475 degreesC have a large change in resistance at 66 degreesC, and display a small temperature hysteresis in the transition. The transition temperature in films grown at 520 degreesC is higher (72 degreesC), whereas the change in resistance is smaller and the hysteresis larger. An attempt has been made to understand the unusual microstructure of VO2 films grown on glass substrates. The variation in the phase transition characteristics is interpreted in terms of the observed film microstructure. The thermal properties of the CVD precursor are also reported

Time Evolution of the Microstructure of VO2(B) Films Deposited on Glass by MOCVD

Thin films of VO2(B), a metastable polymorph of vanadium dioxide, have been grown on glass by low-pressure metalorganic chemical vapor deposition (MOCVD). The films grown for 90 minutes have atypical microstructure, comprising micrometer-sized, island-like entities made up of numerous small, single-crystalline platelets (≅1 μm) emerging orthogonally from larger ones at the center. Microstructure evolution as a function of deposition time has been examined by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The metastable VO2(B) transforms to the stable rutile (R) phase at 550°C in inert ambient, which on cooling convert reversibly to M phase. Electron microscopy shows that annealing leads to the disintegration of the VO2(B) platelets into small crystallites of the rutile phase VO2(R), although the platelet morphology is retained. The magnitude of the jump in resistance at the semiconductor-to-metal, VO2(M)→VO2(R) phase transition depends on the arrangement of polycrystalline platelets in the films