Sublattice asymmetry of impurity doping in graphene: A review

In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional Nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.Comment: 20 pages, 4 figures. Accepted for publication in Beilstein Journal of Nanotechnolog

Tunable plasmonic enhancement of light scattering and absorption in graphene-coated subwavelength wires

The electromagnetic response of subwavelength wires coated with a graphene monolayer illuminated by a linearly polarized plane waves is investigated. The results show that the scattering and extintion cross-sections of the coated wire can be dramatically enhanced when the incident radiation resonantly excites localized surface plasmons. The enhancements occur for p--polarized incident waves and for excitation frequencies that correspond to complex poles in the coefficients of the multipole expansion for the scattered field. By dynamically tuning the chemical potential of graphene, the spectral position of the enhancements can be chosen over a wide range.Comment: Accepted for publication in Journal of Optics 201

Majorana and the theoretical problem of photon-electron scattering

Relevant contributions by Majorana regarding Compton scattering off free or bound electrons are considered in detail, where a (full quantum) generalization of the Kramers-Heisenberg dispersion formula is derived. The role of intermediate electronic states is appropriately pointed out in recovering the standard Klein-Nishina formula (for free electron scattering) by making recourse to a limpid physical scheme alternative to the (then unknown) Feynman diagram approach. For bound electron scattering, a quantitative description of the broadening of the Compton line was obtained for the first time by introducing a finite mean life for the excited state of the electron system. Finally, a generalization aimed to describe Compton scattering assisted by a non-vanishing applied magnetic field is as well considered, revealing its relevance for present day research.Comment: latex, amsart, 10 pages, 1 figur