V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing

Novel impurity-free interdiffusion (IFID) technique, namely, pulsed anodization and subsequent rapid thermal annealing, is applied8 to study GaAs/AlGaAs multiple quantum wires grown by metalorganic chemical vapour deposition on V-grooved GaAs substrate, Photoluminescence (PL) and cathodoluminescence (CL) emissions are observed from GaAs quantum wires. IFID increases both carrier confinement in quantum wires and the efficiency of excess carrier transferring from sidewall quantum wells to quantum wires, where the excess carriers are generated either by optical pumping (PL) or electron pumping (CL)