Operating regime and stability of mode-locking in 10GHz quantum dot laser diodes around 1.5µm

In this paper we investigate and explore the stability and operating regime of modelocking (ML) in 4mm long Fabry-Perot type lasers, corresponding to a roundtrip frequency of 10GHz. The devices are fabricated on InAs/InP quantum dot material, operating at wavelengths around 1.5um, and are HR-coated at the absorber side. In order to find the stable ML region of operation in these devices, we have performed sweep-scans on the injection current of the gain section, and the reverse bias voltage on the absorber section. We will present the optical and electrical spectrum of devices with different absorber length. These results will be compared with the performance of earlier devices without HR coating

Frequency comb generation by CW laser injection into a quantum-dot mode-locked laser

100 GHz) RF generation and telecommunication applications. (C) 2012 Optical Society of Americ

Observation and modeling of long-wavelength InAs/InP (100) quantum dot amplifier small signal gain spectra

Measured gain spectra from InAs/InP (100) quantum-dot amplifiers have been analyzed with a quantum-dot rate-equation model. The amplifiers are fabricated to have a peak gain wavelength around 1700nm. Our comparison between measured and simulated gain spectra shows that two effects in the quantum-dot material introduce the 65 nm blue shift and change in shape that have been observed in the measured gain spectrum with an increase in injection current density from 1000A/cm2 to 3000A/cm2. The first effect is the shift from GS to ES, and the second effect the dot size dependent filling due to the dot size dependent escape rates

A monolithic 20GHz integrated extended cavity mode-locked quantum well ring laser at 1.58µm fabricated in the JEPPIX platform

We report on a passively modelocked InP/InGaAsP quantum well semiconductor ring laser which operates at 20GHz repetition rate and at 1.58µm output wavelength. A number of devices with varying relative positions of the absorbers and amplifiers have been realized using active-passive integration technology in the JEPPIX fabrication platform. The 4mm-long laser ring cavity incorporates a 750µm-long optical amplifier section, a separate 40µm-long saturable absorber section, passive waveguide sections and a passive MMI-type 50% output coupler. We investigate operation regimes of the laser and explore conditions for single mode lasing and mode-locked operation

Dual wavelength mode-locking of InAs/InP quantum dot laser diodes at 1.5μm

We report on stable dual-wavelength mode-locking of 3.1GHz and 10GHz two-section InAs/InP(100) quantum dot laser diodes. Evaluation of relative time delay between different spectral components indicates opposite sign of chirp over the two spectral lobes

Integrated mode-locked inP based lasers for fourier transform spectroscopy

In this paper we present our recent progress on 2.5 GHz mode-locked, quantum well lasers operating at 1550 nm. Two such lasers are monolithically integrated on an InP substrate. Stable passive and hybrid mode-locking of both lasers operating at the same time with a small repetition rate difference is demonstrated

Passive mode-locking dynamics in a 3.1GHz quantum dot laser diode operating around 1.5μm

We report on passive mode-locking in a 3.1GHz InAs/InP(100) quantum dot laser diode operating around 1.5µm. The range of stable passive mode-locking, detailed measurements of the linewidth of the optical modes and the phase modulation in output pulses are presented

Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed