The Role of Power-Law Correlated Disorder in the Anderson Metal-Insulator Transition

We study the influence of scale-free correlated disorder on the metal-insulator transition in the Anderson model of localization. We use standard transfer matrix calculations and perform finite-size scaling of the largest inverse Lyapunov exponent to obtain the localization length for respective 3D tight-binding systems. The density of states is obtained from the full spectrum of eigenenergies of the Anderson Hamiltonian. We discuss the phase diagram of the metal-insulator transition and the influence of the correlated disorder on the critical exponents.Comment: 6 pages, 3 figure

Superbosonization formula and its application to random matrix theory

Starting from Gaussian random matrix models we derive a new supermatrix field theory model. In contrast to the conventional non-linear sigma models, the new model is applicable for any range of correlations of the elements of the random matrices. We clarify the domain of integration for the supermatrices, and give a demonstration of how the model works by calculating the density of states for an ensemble of almost diagonal matrices. It is also shown how one can reduce the supermatrix model to the conventional sigma model.J. E. Bunder, K. B. Efetov, V. E. Kravtsov, O. M. Yevtushenko and M. R. Zirnbaue

1 Tight-Binding Modeling of Charge Migration in DNA Devices

Within the class of biopolymers, DNA is expected to play an outstanding role in molecular electronics [1]. This is mainly due to its unique self-assembling and self-recognition properties which are essential for its performance as carrier of the genetic code. It is the long-standing hope of many scientists tha