Temperature dependence of electron concentration in cadmium arsenide

From measurements of the temperature dependence of the electron concentration in Cd 3 As 2 , we found values for the conduction-band parameters that are in good agreement with those recently reported by Aubin, Caron, and Jay-Gerin. However, in contrast with these authors we found no small overlap, but a relatively large gap of 26 meV between the heavy-hole band maximum and the conduction-band minimum

A New Method to Determine the Coupled Mode Parameters of a Plasmon-Multiphonon System

A new (numerical) method is described to determine all coupled mode parameters of a complex plasmon-phonon system in a semiconductor. First a general theoretical description is given of the complex dielectric function describing such a system. Some paractically important relations are deduced. Starting from an experimentally determined reflectivity spectrum, the dielectric function is determined at a number of discreate frequencies by means of Kramers-Kronig analysis. A complete background is given for a numerical method to determine all relevant mode parameters, especially the coordinates of poles and zeros in the complex frequency plane, from this spectrum. Finally the new method is applied to a test spectrum. The results are discussed and compared with those of other methods

Intrinsic phonon parameters of Cd3P2

Far-infrared reflectivity measurements in the frequency range 40-650 cm-1 at T=10, 100, 150 and 300K have been performed on degenerate n-type Cd3P2 samples. The experimental results are fitted with a model dielectric function. The authors use the Drude/linear oscillators equation for a coupled-plasmon-phonon system. The best fit of the theoretical curve to the experimental data is obtained using six independent transverse phonon modes with temperature-independent eigenfrequencies and oscillator strengths and temperature-dependent damping constants. For the static dielectric constant a temperature-independent value is found of 23+or-1

Magnetoplasma reflectivity studies on Cd3As2

Magnetoplasma reflectivity measurements were performed on Cd3As2 in order to obtain more experimental details about the structure of the plasma reflectivity edge. The experimental results can be explained by assuming the existence of a surface layer with a carrier concentration-gradient which is responsible for optical interference effects

Optical verification of the valence band structure of cadmium arsenide

Optical absorption measurements were performed on thin single crystalline samples of Cd3As2 at temperatures of 300 K and 10 K. At low temperature the interband absorption coefficient shows clearly two steps due to direct transitions from the heavy hole and light hole valence bands to the conduction band. The absorption coefficient can be interpreted quantitatively in an isotropic inverted Kane band model with a modified heavy hole band with its maximum shifted from the ?-point