6 research outputs found
PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED a-Si:H
We show that the increase in the density of gap states N(E) resulting from the photocreation of defects in plasma-deposited a-Si:H can be measured by the field effect and by the conductance change due to surface adsorbates. A simple model is presented which explains the doping dependence of the magnitude and the sign of the light-induced conductance changes