Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure

We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the current through a narrow channel of insulating $\mathrm{SrTiO_3}$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low and elevated temperatures. The transistor shows strong electric-field and temperature-dependent behaviour with a steep sub-threshold slope %of up to as small as $10\:\mathrm{mV/decade}$ and a transconductance as high as $g_m\approx 22 \: \mathrm{\mu A/V}$. A fully consistent transport model for the drain-source tunneling reproduces the measured steep sub-threshold slope.Comment: 20 pages, 6 figures, Supplementary material: 4 pages, 2 figure

Kohn Anomalies in Superconductors

I present the detailed behavior of phonon dispersion curves near momenta which span the electronic Fermi sea in a superconductor. I demonstrate that an anomaly, similar to the metallic Kohn anomaly, exists in a superconductor's dispersion curves when the frequency of the phonon spanning the Fermi sea exceeds twice the superconducting energy gap. This anomaly occurs at approximately the same momentum but is {\it stronger} than the normal-state Kohn anomaly. It also survives at finite temperature, unlike the metallic anomaly. Determination of Fermi surface diameters from the location of these anomalies, therefore, may be more successful in the superconducting phase than in the normal state. However, the superconductor's anomaly fades rapidly with increased phonon frequency and becomes unobservable when the phonon frequency greatly exceeds the gap. This constraint makes these anomalies useful only in high-temperature superconductors such as $\rm La_{1.85}Sr_{.15}CuO_4$.Comment: 18 pages (revtex) + 11 figures (upon request), NSF-ITP-93-7

Influence of Gap Extrema on the Tunneling Conductance Near an Impurity in an Anisotropic Superconductor

Changes: figures added in postscript form, Eq. (7) and various typos corrected. We examine the effect of an impurity on the nearby tunneling conductance in an anisotropically-gapped superconductor. The variation of the conductance has pronounced spatial dependence which depends strongly on the Fermi surface location of gap extrema. In particular, different gap symmetries produce profoundly different spatial features in the conductance. These effects may be detectable with an STM measurement on the surface of a high-temperature superconductor.Comment: 12 pages (revtex) + 3 figures (included - postscript), NSF-ITP-93-8

The wave-vector power spectrum of the local tunnelling density of states: ripples in a d-wave sea

A weak scattering potential imposed on a $CuO_2$ layer of a cuprate superconductor modulates the local density of states $N(x,\omega)$. In recently reported experimental studies scanning-tunneling maps of $N(x,\omega)$ have been Fourier transformed to obtain a wave-vector power spectrum. Here, for the case of a weak scattering potential, we discuss the structure of this power spectrum and its relationship to the quasi-particle spectrum and the structure factor of the scattering potential. Examples of quasi-particle interferences in normal metals and $s$- and d-wave superconductors are discussed.Comment: 22 pages, 21 figures; enlarged discussion of the d-wave response, to be published in Physical Review

Spin injection and electric field effect in degenerate semiconductors

We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped semiconductor structures used in most experiments; we demonstrate that, at the same time, it corresponds to the regime in which carrier-carrier interactions assume a relevant role. Starting from a general formulation of the drift-diffusion equations, which includes many-body correlation effects, we perform detailed calculations of the spin injection characteristics of various heterostructures, and analyze the combined effects of carrier density variation, applied electric field and Coulomb interaction. We show the existence of a degenerate regime, peculiar to semiconductors, which strongly differs, as spin-transport is concerned, from the degenerate regime of metals.Comment: Version accepted for publication in Phys. Rev.

Electric-field dependent spin diffusion and spin injection into semiconductors

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.Comment: 5 pages, 3 eps figure

Method for Measuring the Momentum-Dependent Relative Phase of the Superconducting Gap of High-Temperature Superconductors

The phase variation of the superconducting gap over the (normal) Fermi surface of the high-temperature superconductors remains a significant unresolved question. Is the phase of the gap constant, does it change sign, or is it perhaps complex? A detailed answer to this question would provide important constraints on various pairing mechanisms. Here we propose a new method for measuring the relative gap PHASE on the Fermi surface which is direct, is angle-resolved, and probes the bulk. The required experiments involve measuring phonon linewidths in the normal and superconducting state, with resolution available in current facilities. We primarily address the La_1.85Sr_.15CuO_4 material, but also propose a more detailed study of a specific phonon in Bi_2Sr_2CaCu_2O_8.Comment: 13 pages (revtex) + 5 figures (postscript-included), NSF-ITP-93-2

Quantum interference between non-magnetic impurities in d_x2-y2-wave superconductors

We study quantum interference of electronic waves that are scattered by multiple non-magnetic impurities in a d_x2-y2-wave superconductor. We show that the number of resonance states in the density-of-states (DOS), as well as their frequency and spatial dependence change significantly as the distance between the impurities or their orientation relative to the crystal lattice is varied. Since the latter effect arises from the momentum dependence of the superconducting gap, we argue that quantum interference is a novel tool to identify the symmetry of unconventional superconductors.Comment: 4 pages, 4 figure

Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport

A non-equilibrium Green's function method is applied to model high-field quantum transport and electron-phonon resonances in semiconductor superlattices. The field-dependent density of states for elastic (impurity) scattering is found non-perturbatively in an approach which can be applied to both high and low electric fields. I-V curves, and specifically electron-phonon resonances, are calculated by treating the inelastic (LO phonon) scattering perturbatively. Calculations show how strong impurity scattering suppresses the electron-phonon resonance peaks in I-V curves, and their detailed sensitivity to the size, strength and concentration of impurities.Comment: 7 figures, 1 tabl