185 research outputs found
Electron energy relaxation by phonons in the Kondo condensate
We have used normal metal-insulator-superconductor tunnel junctions as
thermometers at sub-Kelvin temperatures to study the electron-phonon (e-p)
interaction in thin Aluminum films doped with Manganese, as a function of
Manganese concentration. Mn in Al is known to be a Kondo impurity with
extremely high Kondo temperature 500 K, thus our results probe the
e-p coupling in the fully spin compensated, unitary limit. The temperature
dependence of the e-p interaction is consistent with the existing theory for
disordered metals, however full theory including the Kondo effect has not been
worked out yet. The strength of the interaction decreases with increasing
Manganese concentration, providing a means to improve sensitivity of detectors
and efficiency of solid state coolers
Comment on "Giant Nernst Effect due to Fluctuating Cooper Pairs in Superconductors" by M.N. Serbyn, M.A. Skvortsov, A.A. Varlamov, and V. Galitski
In a recent Letter, Serbyn et al. [A] investigated thermomagnetic effects
above the superconducting transition and generalized previous works for
arbitrary magnetic fields and temperatures. While the results of [A] have been
confirmed in [B], we have strong objections: (i) According to our results [C],
the linear response calculation does not require any correction from the
magnetization currents; (ii) The result of [A,B] is giant, because unlike the
normal Fermi liquid, it is of zero order in the particle-hole asymmetry.
Changing the interaction constant in the Cooper channel leads to ridiculously
large results even for nonsuperconducting metals; (iii)Derived in [A] the
Einstein-type relation for thermomagnetic coefficient contradicts to text-book
results.
[A] M.N. Serbyn, M.A. Skvortsov, A.A. Varlamov, V. Galitski, Phys. Rev. Lett.
102, 067001 (2009).
[B] K. Michaeli and A.M. Finkel'stein, EPL 86, 27007 (2009).
[C] A. Sergeev et al., Phys. Rev. B 77, 064501 (2008)
Effects of two dimensional plasmons on the tunneling density of states
We show that gapless plasmons lead to a universal
correction to the tunneling
density of states of a clean two dimensional Coulomb interacting electron gas.
We also discuss a counterpart of this effect in the "composite fermion metal"
which forms in the presence of a quantizing perpendicular magnetic field
corresponding to the half-filled Landau level. We argue that the latter
phenomenon might be relevant for deviations from a simple scaling observed by
A.Chang et al in the tunneling characteristics of Quantum Hall liquids.Comment: 12 pages, Latex, NORDITA repor
Jumps in current-voltage characteristics in disordered films
We argue that giant jumps of current at finite voltages observed in
disordered samples of InO, TiN and YSi manifest a bistability caused by the
overheating of electrons. One of the stable states is overheated and thus
low-resistive, while the other, high-resistive state is heated much less by the
same voltage. The bistability occurs provided that cooling of electrons is
inefficient and the temperature dependence of the equilibrium resistance, R(T),
is steep enough. We use experimental R(T) and assume phonon mechanism of the
cooling taking into account its strong suppression by disorder. Our description
of details of the I-V characteristics does not involve adjustable parameters
and turns out to be in a quantitative agreement with the experiments. We
propose experiments for more direct checks of this physical picture.Comment: Final version, as published; 4 pages, 3 figure
Nonequilibrium electrons in tunnel structures under high-voltage injection
We investigate electronic distributions in nonequilibrium tunnel junctions
subject to a high voltage bias under competing electron-electron and
electron-phonon relaxation processes. We derive conditions for reaching
quasi-equilibrium and show that, though the distribution can still be thermal
for low energies where the rate of the electron-electron relaxation exceeds
significantly the electron-phonon relaxation rate, it develops a power-law tail
at energies of order of . In a general case of comparable electron-electron
and electron-phonon relaxation rates, this tail leads to emission of
high-energy phonons which carry away most of the energy pumped in by the
injected current.Comment: Revised versio
Variational study of triangular lattice spin-1/2 model with ring exchanges and spin liquid state in \kappa-(ET)_2 Cu_2 (CN)_3
We study triangular lattice spin-1/2 system with antiferromagnetic Heisenberg
and ring exchanges using variational approach focusing on possible realization
of spin liquid states. Trial spin liquid wave functions are obtained by
Gutzwiller projection of fermionic mean field states and their energetics is
compared against magnetically ordered trial states. We find that in a range of
the ring exchange coupling upon destroying the antiferromagnetic order, the
best such spin liquid state is essentially a Gutzwiller-projected Fermi sea
state. We propose this spin liquid with spinon Fermi surface as a candidate for
the nonmagnetic insulating phase observed in the organic compound \kappa-(ET)_2
Cu_2 (CN)_3, and describe some experimental consequences of this proposal.Comment: 7 pages, 5 figure
Diffusion Thermopower at Even Denominator Fractions
We compute the electron diffusion thermopower at compressible Quantum Hall
states corresponding to even denominator fractions in the framework of the
composite fermion approach. It is shown that the deviation from the linear low
temperature behavior of the termopower is dominated by the logarithmic
temperature corrections to the conductivity and not to the thermoelectric
coefficient, although such terms are present in both quantities. The enhanced
magnitude of this effect compared to the zero field case may allow its
observation with the existing experimental techniques.Comment: Latex, 12 pages, Nordita repor
The puzzle of 90 degree reorientation in the vortex lattice of borocarbide superconductors
We explain 90 degree reorientation in the vortex lattice of borocarbide
superconductors on the basis of a phenomenological extension of the nonlocal
London model that takes full account of the symmetry of the system. We propose
microscopic mechanisms that could generate the correction terms and point out
the important role of the superconducting gap anisotropy.Comment: 4 pages, 2 eps figure
Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s
We examine the validity of the Fermi-liquid description of the dilute 2D hole
gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has
been established that, at r_s as large as 29, negative magnetoresistance does
exist and is well described by weak localisation. The dephasing time extracted
from the magnetoresistance is dominated by the T^2 -term due to Landau
scattering in the clean limit. The effect of hole-hole interactions, however,
is suppressed when compared with the theory for small r_s.Comment: 4 pages ReVTeX, 4 ps figure
Weak localization in InSb thin films heavily doped with lead
The paper reports on the investigations of the weak localization (WL) effects
in 3D polycrystalline thin films of InSb. The films are closely compensated
showing the electron concentration n>10^{16} cm^{-3} at the total concentration
of the donor and acceptor type structural defects >10^{18} cm^{-3}. Unless
Pb-doped, the InSb films do not show any measurable or show very small WL
effect at 4.2 K. The Pb-doping to the concentration of the order of 10^{18}
cm^{-3} leads to pronounced WL effects below 7 K. In particular, a clearly
manifested SO scattering is observed. From the comparison of the experimental
data on temperature dependence of the magnetoresistivity and sample resistance
with the WL theory, the temperature dependence of the phase destroying time is
determined. The determination is performed by fitting theoretical terms
obtained from Kawabata's theory to experimental data on magnetoresistance. It
is concluded that the dephasing process is connected to three separate
interaction processes. The first is due to the SO scatterings and is
characterized by temperature-independent relaxation time. The second is
associated with the electron-phonon interaction. The third dephasing process is
characterized by independent on temperature relaxation time tau_c. This
relaxation time is tentatively ascribed to inelastic scattering at extended
structural defects, like grain boundaries. The resulting time dephasing time
shows saturation in its temperature dependence. The temperature dependence of
the resistance of the InSb films can be explained by the electron-electron
interaction for T2 K.Comment: 15 pages with 5 figure
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