Transport and Boundary Scattering in Confined Geometries: Analytical Results

We utilize a geometric argument to determine the effects of boundary scattering on the carrier mean-free path in samples of various cross sections. Analytic expressions for samples with rectangular and circular cross sections are obtained. We also outline a method for incorporating these results into calculations of the thermal conductivity.Comment: 35 pages, Late

Electron-Phonon Interaction in Embedded Semiconductor Nanostructures

The modification of acoustic phonons in semiconductor nanostructures embedded in a host crystal is investigated including corrections due to strain within continuum elasticity theory. Effective elastic constants are calculated employing {\em ab initio} density functional theory. For a spherical InAs quantum dot embedded in GaAs barrier material, the electron-phonon coupling is calculated. Its strength is shown to be suppressed compared to the assumption of bulk phonons

Cerenkov generation of high-frequency confined acoustic phonons in quantum wells

We analyze the Cerenkov emission of high-frequency confined acoustic phonons by drifting electrons in a quantum well. We find that the electron drift can cause strong phonon amplification (generation). A general formula for the gain coefficient, alpha, is obtained as a function of the phonon frequency and the structure parameters. The gain coefficient increases sharply in the short-wave region. For the example of a Si/SiGe/Si device it is shown that the amplification coefficients of the order of hundreds of 1/cm can be achieved in the sub-THz frequency range.Comment: 4 pages, 2 figures. Submitted to AP

Quantum theory of intersubband polarons

We present a microscopic quantum theory of intersubband polarons, quasiparticles originated from the coupling between intersubband transitions and longitudinal optical phonons. To this aim we develop a second quantized theory taking into account both the Fr\"ohlich interaction between phonons and intersubband transitions and the Coulomb interaction between the intersubband transitions themselves. Our results show that the coupling between the phonons and the intersubband transitions is extremely intense, thanks both to the collective nature of the intersubband excitations and to the natural tight confinement of optical phonons. Not only the coupling is strong enough to spectroscopically resolve the resonant splitting between the modes (strong coupling regime), but it can become comparable to the bare frequency of the excitations (ultrastrong coupling regime). We thus predict the possibility to exploit intersubband polarons both for applied optoelectronic research, where a precise control of the phonon resonances is needed, and also to observe fundamental quantum vacuum physics, typical of the ultrastrong coupling regime

Grain Boundary Loops in Graphene

Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a new class of topological defects in graphene composed of a rotating sequence of dislocations that close on themselves, forming grain boundary loops that either conserve the number of atoms in the hexagonal lattice or accommodate vacancy/interstitial reconstruction, while leaving no unsatisfied bonds. One grain boundary loop is observed as a "flower" pattern in scanning tunneling microscopy (STM) studies of epitaxial graphene grown on SiC(0001). We show that the flower defect has the lowest energy per dislocation core of any known topological defect in graphene, providing a natural explanation for its growth via the coalescence of mobile dislocations.Comment: 23 pages, 7 figures. Revised title; expanded; updated reference

Determination of step--edge barriers to interlayer transport from surface morphology during the initial stages of homoepitaxial growth

We use analytic formulae obtained from a simple model of crystal growth by molecular--beam epitaxy to determine step--edge barriers to interlayer transport. The method is based on information about the surface morphology at the onset of nucleation on top of first--layer islands in the submonolayer coverage regime of homoepitaxial growth. The formulae are tested using kinetic Monte Carlo simulations of a solid--on--solid model and applied to estimate step--edge barriers from scanning--tunneling microscopy data on initial stages of Fe(001), Pt(111), and Ag(111) homoepitaxy.Comment: 4 pages, a Postscript file, uuencoded and compressed. Physical Review B, Rapid Communications, in press

Variational Derivation of Relativistic Fermion-Antifermion Wave Equations in QED

We present a variational method for deriving relativistic two-fermion wave equations in a Hamiltonian formulation of QED. A reformulation of QED is performed, in which covariant Green functions are used to solve for the electromagnetic field in terms of the fermion fields. The resulting modified Hamiltonian contains the photon propagator directly. The reformulation permits one to use a simple Fock-space variational trial state to derive relativistic fermion-antifermion wave equations from the corresponding quantum field theory. We verify that the energy eigenvalues obtained from the wave equation agree with known results for positronium.Comment: 25 pages, accepted in Journal of Mathematical Physics (2004