7 research outputs found

    Electron-electron interaction in 2D and 1D ferromagnetic (Ga,Mn)As

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    We investigated the magnetotransport in high quality ferromagnetic (Ga,Mn)As films and wires. At low temperature the conductivity decreases with decreasing temperature without saturation down to 20 mK. Here we show, that the conductivity decrease follows a ln(T/T0T/T_0) dependency in 2D films and a 1/T-1/\sqrt{T} dependency in 1D wires and is independent of an applied magnetic field. This behavior can be explained by the theory of electron-electron interaction.Comment: 4 pages, 2 figures, v2: spelling of author name correcte

    Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As

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    The question whether the Anderson-Mott localisation enhances or reduces magnetic correlations is central to the physics of magnetic alloys. Particularly intriguing is the case of (Ga,Mn)As and related magnetic semiconductors, for which diverging theoretical scenarios have been proposed. Here, by direct magnetisation measurements we demonstrate how magnetism evolves when the density of carriers mediating the spin-spin coupling is diminished by the gate electric field in metal/insulator/semiconductor structures of (Ga,Mn)As. Our findings show that the channel depletion results in a monotonic decrease of the Curie temperature, with no evidence for the maximum expected within the impurity-band models. We find that the transition from the ferromagnetic to the paramagnetic state proceeds via the emergence of a superparamagnetic-like spin arrangement. This implies that carrier localisation leads to a phase separation into ferromagnetic and nonmagnetic regions, which we attribute to critical fluctuations in the local density of states, specific to the Anderson-Mott quantum transition.Comment: 8 pages, 3 figure

    Spintronics: The importance of contacts

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    A demonstration of a 'two terminal' single-electron transistor governed by the magnetic anisotropy of ferromagnetic electrodes connected to a metal quantum dot could give birth to a new field of single-electron spintronics

    III–V Based Magnetic Semiconductors

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