584 research outputs found

    Metallic and Insulating Adsorbates on Graphene

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    We directly compare the effect of metallic titanium (Ti) and insulating titanium dioxide (TiO2) on the transport properties of single layer graphene. The deposition of Ti results in substantial n-type doping and a reduction of graphene mobility by charged impurity scattering. Subsequent exposure to oxygen largely reduces the doping and scattering by converting Ti into TiO2. In addition, we observe evidence for short-range scattering by TiO2 impurities. These results illustrate the contrasting scattering mechanisms for identical spatial distributions of metallic and insulating adsorbates

    Tunneling Spin Injection into Single Layer Graphene

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    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\Delta}RNL) of 130 {\Omega} is observed at room temperature, which is the largest value observed in any material. Investigating {\Delta}RNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.Comment: 10 pages, 4 figures. To appear in Physical Review Letter

    The Effect of Cluster Formation on Graphene Mobility

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    We investigate the effect of gold (Au) atoms in the form of both point-like charged impurities and clusters on the transport properties of graphene. Cryogenic deposition (18 K) of Au decreases the mobility and shifts the Dirac point in a manner that is consistent with scattering from point-like charged impurities. Increasing the temperature to room temperature promotes the formation of clusters, which is verified with atomic force microscopy. We find that for a fixed amount of Au impurities, the formation of clusters enhances the mobility and causes the Dirac point to shift back towards zero.Comment: 12 pages, 3 figure

    Local density of states and scanning tunneling currents in graphene

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    We present exact analytical calculations of scanning tunneling currents in locally disordered graphene using a multimode description of the microscope tip. Analytical expressions for the local density of states (LDOS) are given for energies beyond the Dirac cone approximation. We show that the LDOS at the AA and BB sublattices of graphene are out of phase by π\pi implying that the averaged LDOS, as one moves away from the impurity, shows no trace of the 2qF2q_F (with qFq_F the Fermi momentum) Friedel modulation. This means that a STM experiment lacking atomic resolution at the sublattice level will not be able of detecting the presence of the Friedel oscillations [this seems to be the case in the experiments reported in Phys. Rev. Lett. {\bf 101}, 206802 (2008)]. The momentum maps of the LDOS for different types of impurities are given. In the case of the vacancy, 2qF2q_F features are seen in these maps. In all momentum space maps, KK and K+K′K+K^\prime features are seen. The K+K′K+K^\prime features are different from what is seen around zero momentum. An interpretation for these features is given. The calculations reported here are valid for chemical substitution impurities, such as boron and nitrogen atoms, as well as for vacancies. It is shown that the density of states close to the impurity is very sensitive to type of disorder: diagonal, non-diagonal, or vacancies. In the case of weakly coupled (to the carbon atoms) impurities, the local density of states presents strong resonances at finite energies, which leads to steps in the scanning tunneling currents and to suppression of the Fano factor.Comment: 21 pages. Figures 6 and 7 are correctly displayed in this new versio
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