Objects Reconstruction By Compressive Sensing from Single-pixel Registrations Using DMD

Compressive sensing allows to reconstruct information from a number of sparse signals. Use of digital micromirror device (DMD) between object and single-pixel detector planes is example of sparse signals registration technique. Detection of illumination from the objects by a single-pixel detector using a DMD was modeled. Grayscale, binary and color object images were used as objects. By compressed sensing images obtained under various recording conditions were reconstructed. Obtained results were analyzed. Reconstruction quality estimations and processing times are given. Keywords: compressed sensing, single-pixel imaging, digital micromirror device, image quality

Raman spectra of MgB2 at high pressure and topological electronic transition

Raman spectra of the MgB2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ~590 cm-1 related to the E2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas beyond this region the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to ~ 5GPa exhibits a change in the slope as well as a "hysteresis" effect in the frequency vs. pressure behavior. These singularities in the E2g mode behavior under pressure support the suggestion that MgB2 may undergo a pressure-induced topological electronic transition.Comment: 2 figure

Nonstandard analysis in electrical engineering. The analysis of the direct current circles with ideal reactive elements

The article proposes the use of ideas and methods of non-standard analysis in the field of theoretical electronics. The article shows that the analysis of DC circuits, including ideal inductances and capacitances, by standard methods of theoretical electrical engineering is too complicated or almost impossible. To solve this problem, it is proposed to extend the methods of non-standard analysis by the tasks of analyzing electrical circuits with ideal reactive elements. The authors have defined a class of non-standard electrotechnical problems aimed at the analysis of DC electrical circuits, including ideal reactive elements — ideal inductances and capacitances. It is shown that the solution of the selected class of problems by standard methods of theoretical electrical engineering is too difficult or almost impossible. It is proposed to extend the methods of non-standard analysis by the tasks of analyzing electrical circuits with ideal reactive elements. The obtained advantages of this approach are confirmed by examples of calculations of electrical circuits with inductances and capacitances, as well as magnetic circuits

Hpvb and Hpvzm Shaped Growth of Cdznte, Cdse and Znse Crystals.

High-pressure Bridgman (HPVB) and vertical zone melting (HPVZM) growth processes have been applied for the manufacturing of Cd{sub 1-x}Zn{sub x}Te (x = 0.04-0.2), CdSe and ZnSe crystal tapes with sizes up to 120 x 120 x 12 mm. The influences of the technological parameters describing the growth processes on the crystal quality and some selected material properties are discussed. The dependence of the inclusion (bubbles) content on the deviation from melt stoichiometry is determined. A method for growing plates with low content of inclusions is described. High-resistivity crystal tapes of undoped CdZnTe (10{sup 10} Ohm x cm), CdSe (10{sup 11} Ohm x cm) and ZnSe (>10{sup 11} Ohm x cm) were prepared. The possibility of tape growth on oriented seeds is shown for the example of CdSe. The primary differences between HPVB and HPVZM results are described. The main HPVZM advantage for II-VI compound crystal growth is the possibility of obtaining crystals with more stoichiometric composition or with a controlled deviation from stoichiometry. Hence, HPVZM is preferable for growing high-resistivity II-VI crystals with low inclusion content and possibly with better transport properties. Keywords for this report are: Crystal growth, shaped crystal growth, ZnSe, CdSe, CdZnTe, CZT, HPVB, Bridgman, HPVZM, zone melting, radiation detectors

Non-standard analysis in electrical engineering. Transient analysis in second-order electrical circuits with violation of switching laws

For the first time, the authors proposed the use of the mathematical apparatus of non-standard analysis to solve certain non-trivial problems of theoretical electrical engineering. It was established that the axiomatics of non-standard analysis allows to simplify the analysis of transient processes in high-order electric circuits when the switching laws are violated. It is shown that the application of non-standard analysis methods in theoretical electrical engineering provides an opportunity to use the traditional classical method of transient processes analysis of circuits with violation of switching laws. Only by using methods of non-standard analysis, it is possible to strictly prove the fulfillment of the law of energy conservation in such schemes. Also, examples of solving such tasks are given. It is recommended to expand the scope of application of non-standard methods of analysis in problems of various branches of science and technology, which use differential calculus and boundary transitions, and the solution of which is limited or impossible by standard approaches

Characteristic features of the temperature dependence of the surface impedance in polycrystalline MgB2_2 samples

The real $R_s(T)$ and imaginary $X_s(T)$ parts of the surface impedance $Z_s(T)=R_s(T)+iX_s(T)$ in polycrystalline MgB$_2$ samples of different density with the critical temperature $T_c\approx 38$ K are measured at the frequency of 9.4 GHz and in the temperature range $5\le T<200$ K. The normal skin-effect condition $R_s(T)=X_s(T)$ at $T\ge T_c$ holds only for the samples of the highest density with roughness sizes not more than 0.1 $\mu$m. For such samples extrapolation $T\to 0$ of the linear at $T<T_c/2$ temperature dependences $\lambda_L(T)=X_s(T)/\omega\mu_0$ and $R_s(T)$ results in values of the London penetration depth $\lambda_L(0)\approx 600$ \AA and residual surface resistance $R_{res}\approx 0.8$ m$\Omega$. In the entire temperature range the dependences $R_s(T)$ and $X_s(T)$ are well described by the modified two-fluid model.Comment: 7 pages, 3 figures. Europhysics Letters, accepted for publicatio

Electron transport, penetration depth and upper critical magnetic field of ZrB12 and MgB2

We report on the synthesis and measurements of the temperature dependence of resistivity, R(T), the penetration depth, l(T), and upper critical magnetic field, Hc2(T), for polycrystalline samples of dodecaboride ZrB12 and diboride MgB2. We conclude that ZrB12 as well as MgB2 behave like simple metals in the normal state with usual Bloch-Gruneisen temperature dependence of resistivity and with rather low resistive Debye temperature, TR=280 K, for ZrB12 (as compared to MgB2 with TR=900 K). The R(T) and l(T) dependencies of ZrB12 reveal a superconducting transition at Tc=6.0 K. Although a clear exponential l(T)dependence in MgB2 thin films and ceramic pellets was observed at low temperatures, this dependence was almost linear for ZrB12 below Tc/2. These features indicate s-wave pairing state in MgB2, whereas a d-wave pairing state is possible in ZrB12. A fit to the data gives a reduced energy gap 2D(0)/kTc=1.6 for MgB2 films and pellets, in good agreement with published data for 3D \pi - sheets of the Fermi surface. Contrary to conventional theories we found a linear temperature dependence of Hc2(T) for ZrB12 (Hc2(0)=0.15 T).Comment: 8 pages, 10 figures, submitted to JET