7 research outputs found
Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions
Using the spin-polarized tunneling model and taking into account the basic
physics of ferromagnetic semiconductors, we study the temperature dependence of
the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor
(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As. The
experimentally observed TMR ratio is in reasonable agreement with our result
based on the typical material parameters. It is also shown that the TMR ratio
has a strong dependence on both the itinerant-carrier density and the magnetic
ion density in the DMS electrodes. This can provide a potential way to achieve
larger TMR ratio by optimally adjusting the material parameters.Comment: 5 pages (RevTex), 3 figures (eps), submitted to PR