Interface steps in field effect devices

The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which in turn is screened by the doped carriers. We analyze the dipolar electronic structure of a single step in the Thomas-Fermi approximation and find that the transmission coefficient through the step is exponentially suppressed by the electric field and the induced carrier density as well as by the step height. In addition, the field enhancement at the step edge can facilitate the electric breakthrough of the insulating layer. We suggest that these two effects may lead to severe problems when engineering FET devices with very high doping. On the other hand steps can give rise to interesting physics in superconducting FETs by forming weak links and potentially creating atomic size Josephson junctions.Comment: 6 pages, 4 figures, submitted to J. Appl. Phy

Chiral d+is superconducting state in the two dimensional t-t' Hubbard model

Applying the recently developed variational approach to Kohn-Luttinger superconductivity to the t-t' Hubbard model in two dimensions, we have found, for sizeable next-nearest neighbor hopping, an electron density controlled quantum phase transition between a d-wave superconducting state close to half filling and an s-wave superconductor at lower electron density. The transition occurs via an intermediate time reversal breaking d+is superconducting phase, which is characterized by nonvanishing chirality and density-current correlation. Our results suggest the possibility of a bulk time reversal symmetry breaking state in overdoped cuprates

Nonlinear electrodynamics of p-wave superconductors

We consider the Maxwell-London electrodynamics of three dimensional superconductors in p-wave pairing states with nodal points or lines in the energy gap. The current-velocity relation is then nonlinear in the applied field, cubic for point nodes and quadratic for lines. We obtain explicit angular and depth dependent expressions for measurable quantities such as the transverse magnetic moment, and associated torque. These dependences are different for point and line nodes and can be used to distinguish between different order parameters. We discuss the experimental feasibility of this method, and bring forth its advantages, as well as limitations that might be present.Comment: Fourteen pages RevTex plus four postscript figure