Optimization of photomixers and antennas for continuous-wave terahertz emission

We have studied terahertz emission from interdigitated finger photomixers coupled to planar antenna structures. Using both pulsed and continuous-wave excitation, polarization measurements reveal that the antenna design dominates the properties of the radiated output at frequencies below 0.6 THz, while the efficiency at higher frequencies is additionally dependent on the design of the photomixer fingers. We have produced terahertz maps of the device, characterizing the photomixer by measuring the generated power as a function of the excitation position. Together, these measurements have allowed us to understand better the distinct roles of the photomixer and antenna in emission at different fre

Scattering in InAs/GaSb Coupled Quantum Wells as a Probe of Higher Order Subband Hybridisation

We have performed a detailed investigation into the inter-subband scattering within InAs/GaSb coupled quantum wells in the electron dominated regime. By considering the carrier mobilities and the quantum lifetime as a function of carrier density, we find that the occupation of higher order electron-like subbands are inhibited by anticrossing with the hole subbands. We also find that, by applying a gate bias to the GaSb layer, we are able to move the electron-hole anticrossing point in energy, modulating the electron-like states that should be localised within the InAs layer

Ultra-fast sampling of terahertz pulses from a quantum cascade laser using superconducting antenna-coupled NbN and YBCO detectors

We demonstrate the ultra-fast detection of terahertz pulses from a quantum cascade laser (QCL) using superconducting NbN and YBCO detectors. This has enabled both the intrapulse and interpulse dynamics of a THz QCL to be measured directly, including interpulse heating effects on sub-μs timescales

Suppression of Dynamically Induced Stochastic Magnetic Behaviour through Materials Engineering

tochastic behavior fundamentally limits the performance and reliability of nanomagnetic devices. Typically, stochastic behavior is assumed to be the result of simple thermal activation, but it may also be “dynamically induced,” i.e., a direct result of the spatial and temporal complexity of magnetization dynamics. Here, we show how materials engineering can be used to comprehensively suppress dynamically induced stochasticity. Using the dynamics of magnetic domain walls in Ni80Fe20 nanowires as a case study, we show how manipulation of the Gilbert damping constant via doping with the rare-earth-element terbium dramatically simplifies domain-wall dynamics. This allows us to obtain quasi-deterministic behaviors from systems that nominally exhibit exceptionally high levels of stochasticity

Tunneling Between Two-Dimensional Electron Gases in a Strong Magnetic Field

We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $\nu<1$, there is a gap in the current-voltage characteristics centered about $V=0$, followed by a tunneling peak at $\sim 6$~mV. Both features have been observed before and have been attributed to electron-electron interactions within a layer. We have measured high field tunneling peak positions and fitted gap parameters that are proportional to $B$, and independent of the carrier densities of the two layers. This suggests a different origin for the gap to that proposed by current theories, which predict a $\sqrt{B}$ dependence.Comment: 9 pages, cond-mat/yymmnn

Near-Field Analysis of Terahertz Pulse Generation From Photo-Excited Charge Density Gradients

Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses gives rise to emission of electromagnetic pulses of terahertz (THz) frequency radiation. To correlate the THz emission with the photo-excited charge density distribution and the photo-current direction, we mapped near-field and far-field distributions of the generated THz waves from GaAs and Fe-doped InGaAs surfaces. The experimental results show that the charge dynamics in the plane of the surface can radiate substantially stronger THz pulses than the charge dynamics in the direction normal to the surface, which is generally regarded as the dominant origin of the emission