HOT ELECTRON EFFECTS IN A 2D ELECTRON GAS AT THE GaAs/AlGaAs INTERFACE

On décrit ici les effets de porteurs chauds dans un gaz d'électrons bi-dimensionnel à très haute mobilité. Les caractéristiques V-E et Te déduites expérimentalement nous ont donné des informations importantes. Les effets d'écran dus aux interactions électron-électron sont aussi discutés.Hot electron effects of two dimentional electron gas with ultrahigh mobility are described. V-E characteristics and experimentally derived Te gave us important information. The effects of (e,e) scattering and screening are also discussed

NON-DISPERSIVE AND DISPERSIVE TRANSPORT IN AMORPHOUS GERMANIUM SELENIDE AND HYDROGENATED SILICON

The coexistence of non-dispersive (fast) and dispersive (slow) electron transport is observed in Ge-Se evaporated films in time-of-flight measurement. The saturation of the induced charge with increasing electric field in the non-dispersive component allows us to estimate the recombination lifetime of the optically injected electrons. In hydrogenated a-Si, on the other hand, the coexistence of two transport processes is not found so far. Electron transport in GD a-Si is non-dispersive, but highly dispersive in SP a-Si. Holes show dispersive process in both GD and SP a-Si