4,302 research outputs found
Group theory analysis of electrons and phonons in N-layer graphene systems
In this work we study the symmetry properties of electrons and phonons in
graphene systems as function of the number of layers. We derive the selection
rules for the electron-radiation and for the electron-phonon interactions at
all points in the Brillouin zone. By considering these selection rules, we
address the double resonance Raman scattering process. The monolayer and
bilayer graphene in the presence of an applied electric field are also
discussed.Comment: 8 pages, 6 figure
Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
We present a fast method to fabricate high quality heterostructure devices by
picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with
hexagonal boron nitride to demonstrate this approach, showing good electronic
quality with mobilities ranging from 17 000 cm^2/V/s at room temperature to 49
000 cm^2/V/s at 4.2 K, and entering the quantum Hall regime below 0.5 T. This
method provides a strong and useful tool for the fabrication of future high
quality layered crystal devices.Comment: 5 pages, 3 figure
Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
We experimentally study the electronic spin transport in hBN encapsulated
single layer graphene nonlocal spin valves. The use of top and bottom gates
allows us to control the carrier density and the electric field independently.
The spin relaxation times in our devices range up to 2 ns with spin relaxation
lengths exceeding 12 m even at room temperature. We obtain that the ratio
of the spin relaxation time for spins pointing out-of-plane to spins in-plane
is 0.75 for zero applied perpendicular
electric field. By tuning the electric field this anisotropy changes to
0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane
Rashba spin-orbit coupling
Situação atual e perspectivas da caprinocultura no Vale do São Francisco.
Caracterização fÃsica e agro-sócio-econômico da zona caprinÃcola do Vale do São Francisco; Limitações da Caprinocultura regional; Potencialidades da Caprinocultura regional; O mercado para os produtos caprinos e ovinos; O potencial de interação com as áreas irrigadas e com outras atividades agrrÃcolas e não agrÃcolas; Infraestrutura agroindustrial; O expressivo dispositivo institucional da região; Proposta de um programa de desenvolvimento
Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides
Transition metal dichalcogenides (TMDs) combine interesting optical and
spintronic properties in an atomically-thin material, where the light
polarization can be used to control the spin and valley degrees-of-freedom for
the development of novel opto-spintronic devices. These promising properties
emerge due to their large spin-orbit coupling in combination with their crystal
symmetries. Here, we provide simple symmetry arguments in a group-theory
approach to unveil the symmetry-allowed spin scattering mechanisms, and
indicate how one can use these concepts towards an external control of the spin
lifetime. We perform this analysis for both monolayer (inversion asymmetric)
and bilayer (inversion symmetric) crystals, indicating the different mechanisms
that play a role in these systems. We show that, in monolayer TMDs, electrons
and holes transform fundamentally differently -- leading to distinct
spin-scattering processes. We find that one of the electronic states in the
conduction band is partially protected by time-reversal symmetry, indicating a
longer spin lifetime for that state. In bilayer and bulk TMDs, a hidden
spin-polarization can exist within each layer despite the presence of global
inversion symmetry. We show that this feature enables control of the interlayer
spin-flipping scattering processes via an out-of-plane electric field,
providing a mechanism for electrical control of the spin lifetime.Comment: 9 pages, 3 figure
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