Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.Comment: Submitted to Phys. Rev. Let

Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed.Comment: 5 pages, 6 figs. ICPS-28 proceedings (July'06, Vienna) for J. Appl. Phy

Interaction of an electron gas with photoexcited electron-hole pairs in modulation-doped GaAs and CdTe quantum wells

The nature of the correlated electron gas and its response to photo-injected electron-hole pairs in nominally undoped and modulation-doped multiple quantum-well (MQW) structures was studied by experiment and theory, revealing a new type of optically-active excitation, magnetoplasmons bound to a mobile valence hole. These excitations are blue-shifted from the corresponding transition of the isolated charged magnetoexciton X-. The observed blue-shift of X- is larger than that of two-electron negative donor D-, in agreement with theoretical predictions.Comment: 4 pages, 3 figures, EP2DS-14 manuscript, to be published in Physica

Spin relaxation of localized electrons in n-type semiconductors

The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is shown to be limited either by hyperfine interaction, or by spin-orbit interaction in course of exchange-induced spin diffusion. The energy relaxation time in the spin system is governed by phonon-assisted hops within pairs of donors with an optimal distance of about 4 Bohr radii. The spin correlation time of the donor-bound electron is determined either by exchange interaction with other localized electrons, or by spin-flip scattering of free conduction-band electrons. A possibility of optical cooling of the spin system of localized electrons is discussed.Comment: Submitted to the special issue "Optical Orientation", Semiconductor Science and Technolog

Evidence of Hot Carrier Extraction in Metal Halide Perovskite Solar Cells

The presence of hot carriers is presented in the operational properties of an (FA,Cs)Pb(I, Br, Cl)3 solar cell at ambient temperatures and under practical solar concentration. At 100 K, clear evidence of hot carriers is observed in both the high energy tail of the photoluminescence spectra and from the appearance of a non-equilibrium photocurrent at higher fluence in light J-V measurements. At room temperature, however, the presence of hot carriers in the emission at elevated laser fluence are shown to compete with a gradual red shift in the PL peak energy as photo induced halide segregation begins to occur at higher lattice temperature. The effects of thermionic emission of hot carriers and the presence of a non-equilibrium carrier distribution are also shown to be distinct from simple lattice heating. This results in large unsaturated photocurrents at high powers as the Fermi distribution exceeds that of the heterointerface controlling carrier transport and rectification

Anomalous circular polarization of magneto-photoluminescence from individual CdSe nanocrystals

We study the low-temperature magneto-photoluminescence (PL) from individual CdSe nanocrystals. Nanocrystals having a small "bright" exciton fine structure splitting ($<$0.5 meV) exhibit a conventional left- and right-circularly polarized Zeeman PL doublet in applied magnetic fields. In contrast, nanocrystals with large fine structure splitting ($>$1 meV) show an anomalous magneto-PL polarization, wherein the lower-energy peak becomes circularly polarized with increasing field, while the higher-energy peak remains linearly polarized. This unusual behavior arises from strong mixing between the absorbing and emitting bright exciton levels due to strong anisotropic exchange interactions.Comment: 15 pages, 3 figures; submitte

Spatially, Temporally and Polarization-Resolved Photoluminescence Exploration of Excitons in Crystalline Phthalocyanine Thin Films

The lack of long range order in organic semiconductor thin films prevents the unveiling of the complete nature of excitons in optical experiments, because the diffraction limited beam diameters in the bandgap region far exceed typical crystalline grain sizes. Here we present spatially-, temporally- and polarization-resolved dual photoluminescence/linear dichroism microscopy experiments that investigate exciton states within a single crystalline grain in solution-processed phthalocyanine thin films. These experiments reveal the existence of a delocalized singlet exciton, polarized along the high mobility axis in this quasi-1D electronic system. The strong delocalized {\pi} orbitals overlap controlled by the molecular stacking along the high mobility axis is responsible for breaking the radiative recombination selection rules. Using our linear dichroism scanning microscopy setup we further established a rotation of molecules (i.e. a structural phase transition) that occurs above 100 K prevents the observation of this exciton at room temperature.Comment: submitted to Journal of Chem Phys letter